Fermi‐Level Pinning‐Free WSe 2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

(2021) Krishna Murali et al.   ADVANCED FUNCTIONAL MATERIALS

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

(2021) Xiang Ding et al.   APPLIED PHYSICS LETTERS

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

(2021) Tien Dat Ngo et al.   Advanced Electronic Materials

General synthesis of two-dimensional van der Waals heterostructure arrays

(2020) Jia Li et al.   NATURE

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

(2020) Filippo Giannazzo et al.   Nanomaterials

Two-dimensional transistors with reconfigurable polarities for secure circuits

(2020) Peng Wu et al.   Nature Electronics

Gate-Controlled Large Resistance Switching Driven by Charge-Density Wave in 1T−TaS2/2H−MoS2 Heterojunctions

(2019) Mehak Mahajan et al.   Physical Review Applied

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

(2019) Chang-Soo Lee et al.   NANO LETTERS

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

(2019) Zheng Yang et al.   ADVANCED MATERIALS

Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit

(2019) Samuel W. LaGasse et al.   ADVANCED MATERIALS

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

(2019) Jisu Jang et al.   ACS Applied Materials & Interfaces

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2

(2018) Suyoun Lee et al.   Advanced Electronic Materials

Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides

(2018) Siyuan Zhang et al.   ADVANCED MATERIALS

Solution-processable 2D semiconductors for high-performance large-area electronics

(2018) Zhaoyang Lin et al.   NATURE

Electrically Robust Single‐Crystalline WTe 2 Nanobelts for Nanoscale Electrical Interconnects

(2018) Seunguk Song et al.   Advanced Science

Monolithic 3D CMOS Using Layered Semiconductors

(2016) Angada B. Sachid et al.   ADVANCED MATERIALS

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

(2016) Jian Gao et al.   ADVANCED MATERIALS

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

(2016) Xiaochi Liu et al.   ADVANCED MATERIALS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Alloyed 2D Metal–Semiconductor Atomic Layer Junctions

(2016) Ah Ra Kim et al.   NANO LETTERS

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Metallic conduction induced by direct anion site doping in layered SnSe 2

(2016) Sang Il Kim et al.   Scientific Reports

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

(2015) Hafiz M. W. Khalil et al.   ACS Applied Materials & Interfaces

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

(2015) Atiye Pezeshki et al.   ACS Nano

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

(2015) Hyung-Youl Park et al.   ADVANCED MATERIALS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers

(2015) F. Giannazzo et al.   PHYSICAL REVIEW B

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

(2015) Ashish V. Penumatcha et al.   Nature Communications

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Mechanisms of Photoconductivity in Atomically Thin MoS2

(2014) Marco M. Furchi et al.   NANO LETTERS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

The physics and chemistry of the Schottky barrier height

(2014)   Applied Physics Reviews

Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

(2012) Seung Min Song et al.   NANO LETTERS

Symmetry-dependent phonon renormalization in monolayer MoS2transistor

(2012) Biswanath Chakraborty et al.   PHYSICAL REVIEW B