Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices

Title
Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume -, Issue -, Pages 2200975
Publisher
Wiley
Online
2022-12-24
DOI
10.1002/aelm.202200975

Ask authors/readers for more resources

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started