Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices
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Title
Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices
Authors
Keywords
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Journal
Advanced Electronic Materials
Volume -, Issue -, Pages 2200975
Publisher
Wiley
Online
2022-12-24
DOI
10.1002/aelm.202200975
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