Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces

Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation

(2022) Qilong Wu et al.   ACS Nano

Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 van der Waals Heterodevices

(2021) Alexander Hötger et al.   NANO LETTERS

Quantify point defects in monolayer tungsten diselenide

(2021) Sujuan Ding et al.   NANOTECHNOLOGY

The role of chalcogen vacancies for atomic defect emission in MoS2

(2021) Elmar Mitterreiter et al.   Nature Communications

Atomic Electrostatic Maps of Point Defects in MoS2

(2021) Sebastian Calderon V et al.   NANO LETTERS

Nature of Point Defects in Single-Layer MoS2 Supported on Au(111)

(2020) Francesco Tumino et al.   Journal of Physical Chemistry C

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Spin-Dependent Tunneling Barriers in CoPc/VSe2 from Many-Body Interactions

(2020) Runrun Xu et al.   Journal of Physical Chemistry Letters

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

(2019) Kai Sotthewes et al.   Journal of Physical Chemistry C

Point Defects and Localized Excitons in 2D WSe2

(2019) Yu Jie Zheng et al.   ACS Nano

Quasiparticle Levels at Large Interface Systems from Many-Body Perturbation Theory: The XAF-GW Method

(2019) Fengyuan Xuan et al.   Journal of Chemical Theory and Computation

Dielectric screening by 2D substrates

(2019) Keian Noori et al.   2D Materials

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

(2018) Gwang-Sik Kim et al.   ACS Nano

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions

(2018) János Pető et al.   Nature Chemistry

High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene–MoS2 Heterojunctions

(2018) Hefu Huang et al.   ACS Applied Materials & Interfaces

Energy Level Alignment at Hybridized Organic–Metal Interfaces: The Role of Many-Electron Effects

(2017) Yifeng Chen et al.   Journal of Physical Chemistry C

Advanced capabilities for materials modelling with Quantum ESPRESSO

(2017) P Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy

(2017) Seung Hyun Song et al.   Nature Communications

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

Ultrafast Self-Limited Growth of Strictly Monolayer WSe2Crystals

(2016) Jinxin Liu et al.   Small

Atomically-thin layered films for device applications based upon 2D TMDC materials

(2016) Stephen J. McDonnell et al.   THIN SOLID FILMS

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy

(2016) Péter Vancsó et al.   Scientific Reports

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

(2015) Bilu Liu et al.   ACS Nano

Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts

(2015) Y. Guo et al.   APPLIED PHYSICS LETTERS

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

(2015) Xidong Duan et al.   CHEMICAL SOCIETY REVIEWS

Optimization algorithm for the generation of ONCV pseudopotentials

(2015) Martin Schlipf et al.   COMPUTER PHYSICS COMMUNICATIONS

Systematic study of structural, electronic, and optical properties of atomic-scale defects in the two-dimensional transition metal dichalcogenidesMX2(M = Mo, W;X = S, Se, Te)

(2015) Soumyajyoti Haldar et al.   PHYSICAL REVIEW B

Three-fold rotational defects in two-dimensional transition metal dichalcogenides

(2015) Yung-Chang Lin et al.   Nature Communications

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-like WSe2 by Sulfur-Assisted Chemical Vapor Deposition

(2014) Liang Chen et al.   ACS Nano

Schottky barrier heights for Au and Pd contacts to MoS2

(2014) Naveen Kaushik et al.   APPLIED PHYSICS LETTERS

Pseudopotentials periodic table: From H to Pu

(2014) Andrea Dal Corso   COMPUTATIONAL MATERIALS SCIENCE

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

The physics and chemistry of the Schottky barrier height

(2014)   Applied Physics Reviews

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications

(2013) Jing-Kai Huang et al.   ACS Nano

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Sulfur vacancies in monolayer MoS2 and its electrical contacts

(2013) D. Liu et al.   APPLIED PHYSICS LETTERS

Band offsets, Schottky barrier heights, and their effects on electronic devices

(2013) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Optimized norm-conserving Vanderbilt pseudopotentials

(2013) D. R. Hamann   PHYSICAL REVIEW B

Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States

(2013) Diana Y. Qiu et al.   PHYSICAL REVIEW LETTERS

Ideal Energy-Level Alignment at the ZnO/P3HT Photovoltaic Interface

(2012) Keian Noori et al.   ADVANCED FUNCTIONAL MATERIALS

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures

(2011) Jack Deslippe et al.   COMPUTER PHYSICS COMMUNICATIONS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

(2011) Hai Li et al.   Small

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band Offsets at theSi/SiO2Interface from Many-Body Perturbation Theory

(2008) R. Shaltaf et al.   PHYSICAL REVIEW LETTERS