Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations

Published 2015 View Full Article

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Title
Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations
Authors
Keywords
Memristor, RRAM, Memory window, Reliability, Monte-Carlo
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 35, Issue -, Pages 174-180
Publisher
Elsevier BV
Online
2015-03-26
DOI
10.1016/j.mssp.2015.03.015

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