Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

(2021) Md Nur K Alam et al.   JOURNAL OF APPLIED PHYSICS

CP2K: An electronic structure and molecular dynamics software package - Quickstep: Efficient and accurate electronic structure calculations

(2020) Thomas D. Kühne et al.   JOURNAL OF CHEMICAL PHYSICS

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

(2019) Felix Palumbo et al.   ADVANCED FUNCTIONAL MATERIALS

Facts and Myths of Dielectric Breakdown Processes—Part I: Statistics, Experimental, and Physical Acceleration Models

(2019) Ernest Y. Wu   IEEE TRANSACTIONS ON ELECTRON DEVICES

Relation between image charge and potential alignment corrections for charged defects in periodic boundary conditions

(2018) T. R. Durrant et al.   JOURNAL OF CHEMICAL PHYSICS

Intrinsic charge trapping in amorphous oxide films: status and challenges

(2018) Jack Strand et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Intrinsic electron trapping in amorphous oxide

(2018) Jack Strand et al.   NANOTECHNOLOGY

A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

(2017) A. Padovani et al.   JOURNAL OF APPLIED PHYSICS

Defect creation in amorphous HfO 2 facilitated by hole and electron injection

(2017) Jack Strand et al.   MICROELECTRONIC ENGINEERING

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High- k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

(2017) John T. Gaskins et al.   ECS Journal of Solid State Science and Technology

Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica (Adv. Mater. 34/2016)

(2016) Adnan Mehonic et al.   ADVANCED MATERIALS

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

(2016) F. Cerbu et al.   APPLIED PHYSICS LETTERS

Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field

(2016) Boubacar Traoré et al.   Journal of Physical Chemistry C

Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

(2015) Samuel R Bradley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

First principles modeling of electron tunneling between defects in m-HfO2

(2015) K.P. McKenna et al.   MICROELECTRONIC ENGINEERING

Electron-Injection-Assisted Generation of Oxygen Vacancies in MonoclinicHfO2

(2015) Samuel R. Bradley et al.   Physical Review Applied

A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- $\kappa $ Gate-Stacks

(2014) Luca Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The simulated vibrational spectra of HfO2 polymorphs

(2014) B Zhou et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High-κ dielectric breakdown in nanoscale logic devices – Scientific insight and technology impact

(2014) Nagarajan Raghavan et al.   MICROELECTRONICS RELIABILITY

Molecular dynamics simulation of amorphous HfO2for resistive RAM applications

(2014) G Broglia et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Charge Transport and Degradation in HfO2 and HfOx Dielectrics

(2013) Andrea Padovani et al.   IEEE ELECTRON DEVICE LETTERS

Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

(2013) Luca Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electronic structure of oxygen vacancies in hafnium oxide

(2013) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

Stress-induced leakage current and trap generation in HfO2 thin films

(2012) C. Mannequin et al.   JOURNAL OF APPLIED PHYSICS

Time dependent dielectric breakdown physics – Models revisited

(2012) J.W. McPherson   MICROELECTRONICS RELIABILITY

Crossover from incoherent to coherent electron tunneling between defects in MgO

(2012) Keith P. McKenna et al.   PHYSICAL REVIEW B

Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs

(2011) Robert O'Connor et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

(2011) L. Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Role of oxygen vacancies in HfO2-based gate stack breakdown

(2010) X. Wu et al.   APPLIED PHYSICS LETTERS

Area Scaling for Backend Dielectric Breakdown

(2010) Linda Milor et al.   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Auxiliary Density Matrix Methods for Hartree−Fock Exchange Calculations

(2010) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

(2009) Eun-Ae Choi et al.   APPLIED PHYSICS LETTERS

Robust Periodic Hartree−Fock Exchange for Large-Scale Simulations Using Gaussian Basis Sets

(2009) Manuel Guidon et al.   Journal of Chemical Theory and Computation