Article
Nanoscience & Nanotechnology
Lingxian Kong, Guangliang Li, Qi Su, Xianhua Tan, Xuning Zhang, Zhiyong Liu, Guanglan Liao, Bo Sun, Tielin Shi
Summary: This study demonstrates the use of a MoTe2/MoS2 2D heterojunction to improve the performance of photodetectors and achieve polarization-sensitive, self-powered, and broadband photodetection and imaging. The device has a self-powered photoresponse ranging from 520 to 1550 nm due to the built-in electric field of the heterojunction. Under 915 nm light illumination, the device shows outstanding performance, including high responsivity, specific detectivity, fast rise/decay time, and high on/off ratio. The polarization imaging capabilities of the device in scattering surroundings are also demonstrated, with significant contrast enhancement compared to S-0. This work opens up new avenues for developing high-performance polarization-sensitive photodetection and next-generation polarized imaging using anisotropic semimetals heterojunction photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Guanghui Wang, Bin Han, Chun Hong Mak, Jialong Liu, Bo Liu, Peng Liu, Xiaodong Hao, Hongyue Wang, Shufang Ma, Bingshe Xu, Hsien-Yi Hsu
Summary: This study demonstrates a photodetector with a mixed-dimensional van der Waals heterostructure of hBN/Gr/1D CH3NH3PbI3, which shows improved carrier extraction, excellent responsivity, and specific detectivity. The device also exhibits high stability when exposed to air due to the atomic encapsulation of hBN.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl, YangFan Lu, Denise Erb, Liang Hu, Ahmad Echresh, Lars Rebohle, Artur Erbe, Arkady Krasheninnikov, Manfred Helm, Yu-Jia Zeng, Shengqiang Zhou, Slawomir Prucnal
Summary: This study presents a high-performance and self-powered photodetector based on a MoSe2/FePS3 type-II n-p heterojunction. The photodetector operates at room temperature under zero bias and ambient conditions, exhibiting a wide working range and superior responsivity and quantum efficiency.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Naveen Kumar, Malkeshkumar Patel, Donggun Lim, Kibum Lee, Joondong Kim
Summary: Van der Waals and wide bandgap materials play a crucial role in the development of solar energy-activated photoelectric devices and power electronics. This study presents a novel heterojunction of van der Waal and wide bandgap materials for transparent photovoltaics (TPV), which exhibits high optical transparency and impressive photoelectric performance.
SURFACES AND INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Yurong Jiang, Ruiqi Wang, Xueping Li, Zinan Ma, Lin Li, Jian Su, Yong Yan, Xiaohui Song, Congxin Xia
Summary: This study demonstrates an efficient method to optimize the photoelectric performance of vdWH by introducing the photovoltaic field effect. The proposed photodiode based on double vdWHs shows a high responsivity of 715 mA.W-1 and fast response time of 45 mu s, indicating excellent self-powered ability.
Article
Chemistry, Multidisciplinary
Huiming Shang, Yunxia Hu, Feng Gao, Mingjin Dai, Shichao Zhang, Shuai Wang, Decai Ouyang, Xinyu Li, Xin Song, Bo Gao, Tianyou Zhai, PingAn Hu
Summary: This study presents a high-gain photodetector based on a vertical InSe/GaSe heterojunction. By inducing carrier recirculation, the device achieves improved optoelectronic performance and sensitivity. The heterojunction also exhibits the ability to detect weaker light, highlighting its potential for various applications.
Article
Chemistry, Physical
Yupiao Wu, Shuo-En Wu, Jinjin Hei, Longhui Zeng, Pei Lin, Zhifeng Shi, Qingming Chen, Xinjian Li, Xuechao Yu, Di Wu
Summary: This study presents the controllable growth of large-area 2D MoSe2 layers and the fabrication of a high-quality n-MoSe2/p-Si van der Waals heterojunction device. The device exhibited a self-driven broadband photoresponse with impressive responsivity, specific detectivity, and response time. Furthermore, a 4 x 4 integrated heterojunction device array was achieved with good uniformity and satisfying imaging capability. The large-area 2D MoSe2 layer and its heterojunction device array hold great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.
Article
Chemistry, Physical
Yushuang Fu, Xinlin Liu, Cailing Liu, Yiguo Xu, Ayesha Khan Tareen, Karim Khan, Swelm Wageh, Omar A. Al-Hartomy, Abdullah G. Al-Sehemi, Han Zhang, Ye Zhang
Summary: In this study, a mixed-dimensional heterojunction of 0D Bismuth nanoparticles (Bi NPs) coated 2D Borophene (B@Bi) was prepared by a hydrothermal method. The resulting B@Bi-based photodetector (PD) exhibited enhanced self-powered photodetection properties, fast response and recovery speed, and repeatable ON/OFF switch signals after 30 days. This work provides an opportunity for fabricating high-performance mixed-dimensional B@Bi-based PDs with good long-term stability.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Po-Liang Chen, Yueyang Chen, Tian-Yun Chang, Wei-Qing Li, Jia-Xin Li, Seokhyeong Lee, Zhuoran Fang, Mo Li, Arka Majumdar, Chang-Hua Liu
Summary: The extension of the operation wavelength of silicon photonics to the mid-infrared band is of great importance for fields such as health care, astronomy, and chemical sensing. However, a major challenge for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power photodetectors. In this study, researchers demonstrated a van der Waals heterostructure mid-IR photodetector integrated on a silicon-on-insulator waveguide, which exhibited high responsivity and stable switching performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Kun Zhang, Yue Chen, Anna Liu, Ke Deng, Yue Gu, Ting He, Yang Wang, Qing Li, Zhen Wang, Haonan Ge, Fang Zhong, Peng Wang
Summary: In recent years, the polarization infrared detection technology has advanced and been applied in various fields. However, integrating micro polarizers with infrared photodetectors remains a challenge. In this study, a van der Walls heterojunction was used to achieve polarization-sensitive infrared photodetection, utilizing black phosphorus as a natural polarizer. The results demonstrated fast response speed and high detectivity, providing potential for a new infrared polarization detection system.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Jianbin Zhang, Linfan Duan, Nan Zhou, Lihui Zhang, Conghui Shang, Hua Xu, Rusen Yang, Xiao Wang, Xiaobo Li
Summary: In this study, multifunctional vdWs heterojunction devices were achieved by modulating the doping level of GeAs in the GeAs/ReS2 heterojunction, which demonstrated characteristics of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes. The tunneling diode exhibited interesting forward negative differential resistance (NDR) behavior and the GeAs/ReS2 forward rectifying diode demonstrated highly sensitive photodetection in the wide-spectrum range up to 1550 nm. Moreover, the polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7 was observed in the GeAs/ReS2 heterojunction.
Article
Instruments & Instrumentation
Kaixuan Zhang, Dong Wang, Huaizhong Xing, Xiaoshuang Chen, Xiaoyong He, Lin Wang
Summary: This study demonstrates a self-driven and ultra-sensitive room temperature terahertz (THz) photodetector based on an asymmetrically contacted graphene-Ta2NiSe5 van der Waals heterojunction. The detector exhibits an ultra-fast photoresponse, high responsivity, and low noise equivalent power at specific THz frequencies. Moreover, the detector achieves high-resolution THz imaging at room temperature and performs significantly better with a small bias voltage. These results present the feasibility of superior room temperature THz detection and have promising prospects in analytical applications, ultrafast sensing, and security monitoring.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Meng Peng, Yiye Yu, Zhen Wang, Xiao Fu, Yue Gu, Yang Wang, Kun Zhang, Zhenhan Zhang, Min Huang, Zhuangzhuang Cui, Fang Zhong, Peisong Wu, Jiafu Ye, Tengfei Xu, Qing Li, Peng Wang, Fangyu Yue, Feng Wu, Jiangnan Dai, Changqing Chen, Weida Hu
Summary: Emerging low-dimensional materials, such as tellurium (Te), have shown potential for realizing next-generation room-temperature black-body-sensitive infrared detectors. However, fabricating Te-based infrared detectors with low dark current and fast speed remains challenging. In this work, a heterojunction device based on Te and graphene is constructed, achieving high detectivity and a fast response time. The device demonstrates room-temperature blackbody sensitivity and potential for imaging applications.
Article
Chemistry, Multidisciplinary
Jia-Jia Tao, Jinbao Jiang, Shi-Nuan Zhao, Yong Zhang, Xiao-Xi Li, Xiaosheng Fang, Peng Wang, Weida Hu, Young Hee Lee, Hong-Liang Lu, David-Wei Zhang
Summary: By employing mixed-dimensional heterojunction technology, a high-performance Te/ReS2 photodetector has been successfully fabricated, demonstrating superior sensitivity, fast response speed, and high responsivity and detectivity compared to pristine Te and ReS2 photodetectors.
Article
Chemistry, Multidisciplinary
Xiaoqing Chen, Yu Zhang, Ruijuan Tian, Xianghu Wu, Zhengdong Luo, Yan Liu, Xinran Wang, Jianlin Zhao, Xuetao Gan
Summary: A quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure is reported in this study. The QNPD exhibits unique electronic and optical attributes and extends the photodetection wavelength range from 900 to 1750 nm due to the extra second-harmonic generation (SHG) process in GaSe/InSe. It is highly sensitive to the variation of optical intensity and can be used as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer for signal processing.
Article
Chemistry, Physical
Jiadong Zhou, Chao Zhu, Yao Zhou, Jichen Dong, Peiling Li, Zhaowei Zhang, Zhen Wang, Yung-Chang Lin, Jia Shi, Runwu Zhang, Yanzhen Zheng, Huimei Yu, Bijun Tang, Fucai Liu, Lin Wang, Liwei Liu, Gui-Bin Liu, Weida Hu, Yanfeng Gao, Haitao Yang, Weibo Gao, Li Lu, Yeliang Wang, Kazu Suenaga, Guangtong Liu, Feng Ding, Yugui Yao, Zheng Liu
Summary: This study reveals a competitive-chemical-reaction-based growth mechanism that allows for the growth of transition metal chalcogenides and transition metal phosphorous chalcogenides with different compositions and phases. It provides an interesting platform for the exploration of 2D TMPCs and TMCs.
Article
Physics, Applied
Ruobing Lin, Dongyang Zhao, Jiyue Zhang, Hechun Cao, Jinhua Zeng, Xudong Wang, Wei Bai, Jing Yang, Yuanyuan Zhang, Xiaodong Tang, Yan Chen, Jianlu Wang, Junhao Chu
Summary: In this study, two-dimensional GaGeTe flakes with different thicknesses were exfoliated and characterized. The vibrational modes of GaGeTe flakes were found to be dependent on layer thickness, with characteristic Raman-active modes observed for few-layer (FL) GaGeTe. The electrical conductivity of the flakes decreased exponentially with decreasing thickness due to bandgap widening, and the thickness also affected the temperature dependence behavior of the conductivity, indicating a transition from semimetal to semiconductor. These findings were supported by theoretical calculations.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Kaixuan Zhang, Zhen Hu, Libo Zhang, Yulu Chen, Dong Wang, Mengjie Jiang, Gianluca D'Olimpio, Li Han, Chenyu Yao, Zhiqingzi Chen, Huaizhong Xing, Chia-Nung Kuo, Chin Shan Lue, Ivana Vobornik, Shao-Wei Wang, Antonio Politano, Weida Hu, Lin Wang, Xiaoshuang Chen, Wei Lu
Summary: This study exploits low-energy type-II Dirac fermions in topological semimetals for ultrasensitive THz detection, and demonstrates a novel photodetector combining two Dirac materials, graphene and NiTeSe, with high responsivity, fast response time, and outstanding stability.
Article
Materials Science, Multidisciplinary
Kangjie Li, Ting He, Nan Guo, Tengfei Xu, Xiao Fu, Fang Wang, Hangyu Xu, Guohua Li, Shuning Liu, Ke Deng, Yunlong Xiao, Jinshui Miao, Weida Hu
Summary: This article introduces a semiconductor homojunction based on 2D materials, which is a promising candidate for optoelectronic logic devices. The homojunction is made from vertically stacked MoTe2/CuInP2S6/Au layers in a dual-floating gate transistor configuration. Through the band alignment between MoTe2 and CuInP2S6, the polarity of the MoTe2 homojunctions can be modulated by the floating gate, achieving logic gate XOR without the need for applied voltage. The devices also show anomalous photoresponse and optical memory behaviors, indicating their potential for fully light-actuated sensing capability in optoelectronic logic devices.
ADVANCED OPTICAL MATERIALS
(2023)
Review
Multidisciplinary Sciences
Fang Wang, Tao Zhang, Runzhang Xie, Zhen Wang, Weida Hu
Summary: This article proposes practical guidelines for characterizing the performance of 2D photodetectors and analyzes common situations where their performance can be misestimated.
NATURE COMMUNICATIONS
(2023)
Article
Optics
Xiao Fu, Tangxin Li, Bin Cai, Jinshui Miao, Gennady N. Panin, Xinyu Ma, Jinjin Wang, Xiaoyong Jiang, Qing Li, Yi Dong, Chunhui Hao, Juyi Sun, Hangyu Xu, Qixiao Zhao, Mengjia Xia, Bo Song, Fansheng Chen, Xiaoshuang Chen, Wei Lu, Weida Hu
Summary: Conventional AI machine vision technology uses separate units for sensing, computing, and storage, leading to high power consumption and latency due to frequent data movement. A more efficient approach is using sensor elements to offload memory and computational tasks. We propose a non-volatile photomemristor that can modulate reconfigurable responsivity and store it in the device. This photomemristor implements computationally complete logic with photoresponse-stateful operations, serving as both a logic gate and memory.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Review
Physics, Applied
Hanxue Jiao, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, Jianlu Wang
Summary: Ferroelectric materials have high value in the semiconductor industry due to their high dielectric constant and adjustable spontaneous polarization. Ferroelectric field effect transistors (FeFETs) are attractive for advanced electronic and optoelectronic applications, and this review gives a comprehensive overview of their structures and applications. It introduces the background and significance of ferroelectrics and FeFETs, discusses the methods of building FeFETs with different structures and the physical models describing their characteristics. The review also presents important applications of FeFETs in electronics and optoelectronics, and summarizes the promising applications and challenges based on the discussions.
APPLIED PHYSICS REVIEWS
(2023)
Article
Chemistry, Multidisciplinary
Chong Wang, Yuangang Xie, Junwei Ma, Guangwei Hu, Qiaoxia Xing, Shenyang Huang, Chaoyu Song, Fanjie Wang, Yuchen Lei, Jiasheng Zhang, Lei Mu, Tan Zhang, Yuan Huang, Cheng-Wei Qiu, Yugui Yao, Hugen Yan
Summary: Stacking bilayer structures and manipulating geometric parameters, such as twist angle (TA) and film thickness ratio (TR), can effectively modify the plasmon topology in in-plane anisotropic films. This study demonstrates the successful modification of plasmon topology in WTe2 bilayers by changing TR and TA synergistically. The results provide insights into the manipulation of plasmonic topology and have potential applications in biosensing, heat transfer, and enhancing spontaneous emission.
Article
Multidisciplinary Sciences
Yuchen Lei, Junwei Ma, Jiaming Luo, Shenyang Huang, Boyang Yu, Chaoyu Song, Qiaoxia Xing, Fanjie Wang, Yuangang Xie, Jiasheng Zhang, Lei Mu, Yixuan Ma, Chong Wang, Hugen Yan
Summary: The authors determine the exciton polarizabilities for 3- to 11-layer black phosphorus via frequency-resolved photocurrent measurements on dual-gate devices, and unveil the exciton response for higher-index sub-bands under the gate electrical field, as well as a carrier screening effect in thicker samples.
NATURE COMMUNICATIONS
(2023)
Review
Optics
Piotr Martyniuk, Peng Wang, Antoni Rogalski, Yue Gu, Ruiqi Jiang, Fang Wang, Weida Hu
Summary: This article discusses the importance and recent developments of avalanche photodiodes (APDs) in optical communication systems, as well as potential alternatives to traditional APD technologies. It shows that the evolution of APDs has led to improvements in device performance, such as higher bandwidths, lower noise, and higher gain-bandwidth products. The use of two-dimensional materials-based APDs is considered as a promising alternative due to their high-performance sensitivity and low excess noise.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Optics
Yonghao Bu, Xiansong Ren, Jing Zhou, Zhenhan Zhang, Jie Deng, Hangyu Xu, Runzhang Xie, Tianxin Li, Weida Hu, Xia Guo, Wei Lu, Xiaoshuang Chen
Summary: We have achieved a breakthrough in developing monolithic polarization detectors by creating a configurable circular-polarization-dependent optoelectronic silent state using the superposition of two photoresponses with enantiomerically opposite ellipticity dependences. This scheme significantly enhances the circular polarization extinction ratio and sensitivity to light ellipticity perturbation.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Qianru Zhao, Haoran Yan, Xudong Wang, Yan Chen, Shukui Zhang, Shuaiqin Wu, Xinning Huang, Yunxiang Di, Ke Xiong, Jinhua Zeng, Hanxue Jiao, Tie Lin, Hu He, Jun Ge, Xiangjian Meng, Hong Shen, Junhao Chu, Jianlu Wang
Summary: This study demonstrates that the optical performance of 2D material-based photodetectors can be enhanced by surface acoustic wave (SAW). By manipulating the SAW, the devices exhibit significantly reduced dark current while maintaining nearly unchanged photocurrent, resulting in excellent photoresponse performance. These devices provide a promising pathway for high-performance optoelectronic applications and reveal a new possibility for acoustic devices in optoelectronics.
ADVANCED ELECTRONIC MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Tiange Zhao, Jiaxiang Guo, Taotao Li, Zhen Wang, Meng Peng, Fang Zhong, Yue Chen, Yiye Yu, Tengfei Xu, Runzhang Xie, Pingqi Gao, Xinran Wang, Weida Hu
Summary: The fabrication of large-area two-dimensional (2D) materials is crucial for their industrial applications, and chemical vapor deposition (CVD) is a promising method for producing high-quality films at scale. Recent advances in epitaxial growth of large-area single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides have emphasized the importance of substrate engineering in terms of lattice orientation, surface steps, and energy considerations. This review focuses on the current strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering for wafer-scale integration of 2D materials in electronics and photonics.
CHEMICAL SOCIETY REVIEWS
(2023)
Article
Nanoscience & Nanotechnology
Chunhui Hao, Xiao Fu, Xiaoyong Jiang, Yutong Li, Juyi Sun, Haitao Wu, He Zhu, Qing Li, Yunhai Li, Zhangcheng Huang, Fang Zhong, Ting He, Jinshui Miao, Weida Hu
Summary: Most greenhouse gases come from biological activities and industry, leading to global warming and impacting human life. Detection and management of greenhouse gases and hazardous gases in the environment are increasingly demanding for the green transformation of the global economy and seeking higher quality of human life. Gas sensors capable of detecting gas volume fractions from 10-9 to 10-4 are required in various fields. This review summarizes the mechanisms of common gas detectors, discusses the advantages of nanostructured gas sensors, and describes the applications of infrared gas sensors based on nanophotonic devices, providing an outlook on their future development.
IEEE OPEN JOURNAL OF NANOTECHNOLOGY
(2023)
