4.8 Article

Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n-p Type-II Heterostructures

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 9, Pages 11927-11936

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c24308

Keywords

molybdenum diselenide; iron phosphorus trisulfide; van der Waals heterojunction; broadband photodetector; type-II band alignment

Funding

  1. China Scholarship Council [201706890037]
  2. National Natural Science Foundation of China [61804098]
  3. Zhejiang Provincial Natural Science Foundation of China [LZ21E020002]
  4. Zhejiang Province Public Welfare Technology Application Research Project (CN) [LGC19E020002]
  5. Shenzhen Science and Technology Project [JCYJ20180507182246321]
  6. DFG [KR 4866/2-1, 339 406129719]

Ask authors/readers for more resources

This study presents a high-performance and self-powered photodetector based on a MoSe2/FePS3 type-II n-p heterojunction. The photodetector operates at room temperature under zero bias and ambient conditions, exhibiting a wide working range and superior responsivity and quantum efficiency.
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (R-max) of 52 mA W-1 and an external quantum efficiency (EQE(max)) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.

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