HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 x 10(10) cm Hz(1/2) W-1 and average blackbody detectivity over 2.1 x 10(10) cm Hz(1/2) W-1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

Automated summary

This study proposes a new generation infrared detector using a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode for polarization-sensitive midwave infrared photodetection. The device achieves high performance without the need for additional polarization optics and cryogenic cooling. It offers a practical solution for next-generation infrared detectors with high operation temperature and multi-information acquisition.