In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

(2015) Wei Wang et al.   APPLIED PHYSICS LETTERS

Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

(2015) Yuan Dong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

(2015) Wei Wang et al.   JOURNAL OF APPLIED PHYSICS

Lasing in direct-bandgap GeSn alloy grown on Si

(2015) S. Wirths et al.   Nature Photonics

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

(2015) Yuan Dong et al.   OPTICS EXPRESS

Characteristics of Sn segregation in Ge/GeSn heterostructures

(2014) H. Li et al.   APPLIED PHYSICS LETTERS

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

(2014) J. D. Gallagher et al.   APPLIED PHYSICS LETTERS

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

(2014) Wei Wang et al.   APPLIED SURFACE SCIENCE

Cubic Phase Sn-Rich GeSn Nanocrystals in a Ge Matrix

(2014) Alexander A. Tonkikh et al.   CRYSTAL GROWTH & DESIGN

Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well

(2014) N. Yahyaoui et al.   JOURNAL OF APPLIED PHYSICS

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

(2014) Michael Oehme et al.   OPTICS EXPRESS

Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

(2013) Ruben R. Lieten et al.   Applied Physics Express

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

(2013) Alexander A. Tonkikh et al.   APPLIED PHYSICS LETTERS

High-responsivity GeSn short-wave infrared p-i-n photodetectors

(2013) Dongliang Zhang et al.   APPLIED PHYSICS LETTERS

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

(2013) Nupur Bhargava et al.   APPLIED PHYSICS LETTERS

Tensely strained GeSn alloys as optical gain media

(2013) S. Wirths et al.   APPLIED PHYSICS LETTERS

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

(2013) H. H. Tseng et al.   APPLIED PHYSICS LETTERS

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

(2013) Xiao Gong et al.   IEEE ELECTRON DEVICE LETTERS

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

(2013) Pengfei Guo et al.   JOURNAL OF APPLIED PHYSICS

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

(2013) Yue Yang et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

(2012) Hai Lin et al.   APPLIED PHYSICS LETTERS

Electronic band structure and effective mass parameters of Ge1-xSnx alloys

(2012) Kain Lu Low et al.   JOURNAL OF APPLIED PHYSICS

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(2011) J. Werner et al.   APPLIED PHYSICS LETTERS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

(2011) Y. Shimura et al.   THIN SOLID FILMS

Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

(2010) Guo-En Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Germanium $\hbox{n}^{+}/\hbox{p}$ Diodes: A Dilemma Between Shallow Junction Formation and Reverse Leakage Current Control

(2010) Yu-Lin Chao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

(2009) Jay Mathews et al.   APPLIED PHYSICS LETTERS

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

(2009) Geert Hellings et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Infrared dielectric function ofp-typeGe0.98Sn0.02alloys

(2009) Vijay R. D’Costa et al.   PHYSICAL REVIEW B

Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures

(2009) T. Herrmannsdörfer et al.   PHYSICAL REVIEW LETTERS

Activation and carrier mobility in high fluence B implanted germanium

(2008) S. Mirabella et al.   APPLIED PHYSICS LETTERS

Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

(2008) Wan-Jian Yin et al.   PHYSICAL REVIEW B