Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

Raman study of strained Ge1−xSnx alloys

(2011) Hai Lin et al.   APPLIED PHYSICS LETTERS

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(2011) J. Werner et al.   APPLIED PHYSICS LETTERS

Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

(2011) Yijie Huo et al.   APPLIED PHYSICS LETTERS

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

(2011) R. Roucka et al.   APPLIED PHYSICS LETTERS

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

(2011) Robert Chen et al.   APPLIED PHYSICS LETTERS

Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

(2011) M. Oehme et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

GeSn p-i-n photodetector for all telecommunication bands detection

(2011) Shaojian Su et al.   OPTICS EXPRESS

Strain-enhanced photoluminescence from Ge direct transition

(2010) T.-H. Cheng et al.   APPLIED PHYSICS LETTERS

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

(2010) J. Mathews et al.   APPLIED PHYSICS LETTERS

X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy

(2010) Hai Lin et al.   JOURNAL OF CRYSTAL GROWTH