Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Title
Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 6, Pages 064101
Publisher
AIP Publishing
Online
2016-02-10
DOI
10.1063/1.4941537

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