Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
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Title
Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 2, Pages 025704
Publisher
AIP Publishing
Online
2016-01-14
DOI
10.1063/1.4938532
References
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Related references
Note: Only part of the references are listed.- Subthreshold electrical transport in amorphous phase-change materials
- (2015) Manuel Le Gallo et al. NEW JOURNAL OF PHYSICS
- Projected phase-change memory devices
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- (2015) Martin Rütten et al. Scientific Reports
- Electrical bistability in amorphous semiconductors: A basic analytical theory
- (2014) Fabrizio Buscemi et al. APPLIED PHYSICS LETTERS
- Ultrafast terahertz-induced response of GeSbTe phase-change materials
- (2014) Michael J. Shu et al. APPLIED PHYSICS LETTERS
- The gradual nature of threshold switching
- (2014) M Wimmer et al. NEW JOURNAL OF PHYSICS
- Crystal growth within a phase change memory cell
- (2014) Abu Sebastian et al. Nature Communications
- Hot-electron conduction in ovonic materials
- (2013) Carlo Jacoboni et al. SOLID-STATE ELECTRONICS
- Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits
- (2012) Wally Czubatyj et al. Electronic Materials Letters
- Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices
- (2012) Nicola Ciocchini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
- (2012) J. L. M. Oosthoek et al. JOURNAL OF APPLIED PHYSICS
- Non-resistance-based cell-state metric for phase-change memory
- (2011) Abu Sebastian et al. JOURNAL OF APPLIED PHYSICS
- Phase Change Memory
- (2010) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Electro-thermal theory of the switching and memory effects in chalcogenide glassy semiconductors
- (2009) Konstantin Tsendin PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Threshold switching and phase transition numerical models for phase change memory simulations
- (2008) A. Redaelli et al. JOURNAL OF APPLIED PHYSICS
- Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
- (2008) Daniele Ielmini PHYSICAL REVIEW B
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