Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices

Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5

(2012) P. Fantini et al.   APPLIED PHYSICS LETTERS

Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

(2012) P. Fantini et al.   APPLIED PHYSICS LETTERS

Understanding Overreset Transition in Phase-Change Memory Characteristics

(2012) A. Calderoni et al.   IEEE ELECTRON DEVICE LETTERS

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

Non-resistance-based cell-state metric for phase-change memory

(2011) Abu Sebastian et al.   JOURNAL OF APPLIED PHYSICS

Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

(2011) F. Xiong et al.   SCIENCE

Incomplete Filament Crystallization During Set Operation in PCM Cells

(2010) Davide Mantegazza et al.   IEEE ELECTRON DEVICE LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

(2009) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Size-Dependent Surface-Induced Heterogeneous Nucleation Driven Phase-Change in Ge2Sb2Te5Nanowires

(2008) Se-Ho Lee et al.   NANO LETTERS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B