The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

(2012) P. Fantini et al.   APPLIED PHYSICS LETTERS

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

(2012) Daniel Krebs et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments

(2011) Jennifer Luckas et al.   JOURNAL OF APPLIED PHYSICS

Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

(2011) J. L. M. Oosthoek et al.   JOURNAL OF APPLIED PHYSICS

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Phase Change Materials

(2009) Simone Raoux   Annual Review of Materials Research

Programming margin enlargement by material engineering for multilevel storage in phase-change memory

(2009) You Yin et al.   APPLIED PHYSICS LETTERS

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS