Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon
出版年份 2016 全文链接
标题
Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 8, Pages 085705
出版商
AIP Publishing
发表日期
2016-08-26
DOI
10.1063/1.4961423
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect
- (2016) Brett Hallam et al. Physica Status Solidi-Rapid Research Letters
- Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon
- (2015) J. Schön et al. JOURNAL OF APPLIED PHYSICS
- Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
- (2015) Tim Niewelt et al. Physica Status Solidi-Rapid Research Letters
- Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation
- (2013) Tine Uberg Naerland et al. IEEE Journal of Photovoltaics
- Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
- (2012) M. Forster et al. APPLIED PHYSICS LETTERS
- Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
- (2012) J. D. Murphy et al. JOURNAL OF APPLIED PHYSICS
- Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride
- (2011) Johannes Seiffe et al. JOURNAL OF APPLIED PHYSICS
- Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
- (2011) F. E. Rougieux et al. JOURNAL OF APPLIED PHYSICS
- Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon
- (2011) V. V. Voronkov et al. JOURNAL OF APPLIED PHYSICS
- Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon
- (2011) F. E. Rougieux et al. IEEE Journal of Photovoltaics
- Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence
- (2010) J. A. Giesecke et al. APPLIED PHYSICS LETTERS
- Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon
- (2010) T. Schutz-Kuchly et al. APPLIED PHYSICS LETTERS
- Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon
- (2010) Bianca Lim et al. JOURNAL OF APPLIED PHYSICS
- Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
- (2009) Bianca Lim et al. APPLIED PHYSICS LETTERS
- Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
- (2009) D. Macdonald et al. JOURNAL OF APPLIED PHYSICS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started