Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2

Ferroelectricity in bulk hafnia

(2021) Thomas Mikolajick et al.   NATURE MATERIALS

Next generation ferroelectric materials for semiconductor process integration and their applications

(2021) T. Mikolajick et al.   JOURNAL OF APPLIED PHYSICS

Effects of strain on the electrical, optical, and ferroelectric transition properties of HfO2: ab initio simulation study

(2021) Jibao Wu   JOURNAL OF PHYSICS-CONDENSED MATTER

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

(2021) Pavan Nukala et al.   SCIENCE

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

(2021) Duk-Hyun Choe et al.   Materials Today

Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations

(2020) Sheng-Ting Fan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

(2020) Yuke Zhang et al.   Physical Review Applied

Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO 2 Ferroelectric Thin Films

(2020) Shuaidong Li et al.   Advanced Electronic Materials

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

(2020) Houfang Liu et al.   Advanced Science

Energy preference of uniform polarization switching for HfO2 by first-principle study

(2020) Yun-Wen Chen et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in HfO2

(2020) Hyemi Yang et al.   Physical Review Applied

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Unveiling the double-well energy landscape in a ferroelectric layer

(2019) Michael Hoffmann et al.   NATURE

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Prediction of new metastable $$\hbox {HfO}_{2}$$ HfO 2 phases: toward understanding ferro- and antiferroelectric films

(2017) S. V. Barabash   Journal of Computational Electronics

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

A beginner's guide to the modern theory of polarization

(2012) Nicola A. Spaldin   JOURNAL OF SOLID STATE CHEMISTRY

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER