Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

(2021) Li-Heng Li et al.   APPLIED PHYSICS LETTERS

Fully hardware-implemented memristor convolutional neural network

(2020) Peng Yao et al.   NATURE

Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

(2019) Muhammad Ismail et al.   APPLIED PHYSICS LETTERS

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

(2019) Elliot J. Fuller et al.   SCIENCE

Optoelectronic resistive random access memory for neuromorphic vision sensors

(2019) Feichi Zhou et al.   Nature Nanotechnology

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

(2018) Jun Yin et al.   ADVANCED FUNCTIONAL MATERIALS

Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

(2018) Quantan Wu et al.   APPLIED PHYSICS LETTERS

Oxygen vacancy chain and conductive filament formation in hafnia

(2018) Kan-Hao Xue et al.   JOURNAL OF APPLIED PHYSICS

Structural absorption by barbule microstructures of super black bird of paradise feathers

(2018) Dakota E. McCoy et al.   Nature Communications

Zirconia and hafnia polymorphs: Ground-state structural properties from diffusion Monte Carlo

(2018) Hyeondeok Shin et al.   PHYSICAL REVIEW MATERIALS

Improved LDA-1/2 method for band structure calculations in covalent semiconductors

(2018) Kan-Hao Xue et al.   COMPUTATIONAL MATERIALS SCIENCE

The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector

(2018) Chun-Kuei Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Modulating Interfacial Cation Migration Induced Threshold Switching in Bilayer Oxide Memristive Device

(2018) Jun Yin et al.   Journal of Physical Chemistry C

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

(2018) Shuang Pi et al.   Nature Nanotechnology

Double-slit photoelectron interference in strong-field ionization of the neon dimer

(2018) Maksim Kunitski et al.   Nature Communications

Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

(2017) Yoonho Ahn et al.   JOURNAL OF ELECTROCERAMICS

Resistive Random Access Memory for Future Information Processing System

(2017) Huaqiang Wu et al.   PROCEEDINGS OF THE IEEE

Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

(2017) Bethany M. Hudak et al.   Nature Communications

In situ click chemistry generation of cyclooxygenase-2 inhibitors

(2017) Atul Bhardwaj et al.   Nature Communications

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

(2016) Suhas Kumar et al.   ACS Nano

Metal–Metal Bonding Stabilized Ground State Structure of Early Transition Metal Monoxide TM–MO (TM = Ti, Hf, V, Ta)

(2016) Linggang Zhu et al.   Journal of Physical Chemistry C

Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields

(2016) Keun-Young Shin et al.   Advanced Electronic Materials

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

(2015) Jui-Yuan Chen et al.   ADVANCED MATERIALS

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

(2015) A. Prakash et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

(2015) Umberto Celano et al.   NANO LETTERS

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

(2015) Yingtao Li et al.   NANOTECHNOLOGY

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Pressure-induced novel compounds in the Hf-O system from first-principles calculations

(2015) Jin Zhang et al.   PHYSICAL REVIEW B

Ferroelastic Domain Organization and Precursor Control of Size in Solution-Grown Hafnium Dioxide Nanorods

(2014) Sean W. Depner et al.   ACS Nano

Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

(2014) Yuchao Yang et al.   ADVANCED MATERIALS

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

(2014) Shaoli Lv et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Grain boundary composition and conduction in HfO2: An ab initio study

(2013) K.-H. Xue et al.   APPLIED PHYSICS LETTERS

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Thermodynamics of the Zr-O system from first-principles calculations

(2013) B. Puchala et al.   PHYSICAL REVIEW B

Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles

(2013) Kan-Hao Xue et al.   PHYSICAL REVIEW LETTERS

Nature of the filament formed in HfO2-based resistive random access memory

(2013) Francesca De Stefano et al.   THIN SOLID FILMS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

(2012) Feng PAN et al.   Progress in Natural Science-Materials International

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive non-volatile memory devices (Invited Paper)

(2009) Rainer Waser   MICROELECTRONIC ENGINEERING

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Approximation to density functional theory for the calculation of band gaps of semiconductors

(2008) Luiz G. Ferreira et al.   PHYSICAL REVIEW B