Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Molecular Beam Epitaxial Growth of AlN Thin Films on Si through Exploiting Low Al Adatom Migration and the Nitrogen-Rich Environment on a Nanowire Template

(2021) Xue Yin et al.   CRYSTAL GROWTH & DESIGN

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

(2020) Jianfei Shen et al.   APPLIED PHYSICS LETTERS

The 2020 UV Emitter Roadmap

(2020) Hiroshi Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

(2020) Zhe Zhuang et al.   OPTICS EXPRESS

Highly efficient p-type doping of GaN under nitrogen-rich and low-temperature conditions by plasma-assisted molecular beam epitaxy

(2019) H. Tang et al.   AIP Advances

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

(2019) Ziyi Zhang et al.   Applied Physics Express

Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency

(2019) Walter Shin et al.   OPTICS EXPRESS

Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence

(2018) Yuanpeng Wu et al.   JOURNAL OF CRYSTAL GROWTH

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

(2018) Meixin Feng et al.   ACS Photonics

Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping

(2018) Hongchang Tao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth of high-quality AlGaN epitaxial films on Si substrates

(2017) Yuan Li et al.   MATERIALS LETTERS

Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate

(2017) Binh Tinh Tran et al.   Scientific Reports

Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

(2016) S. Zhao et al.   APPLIED PHYSICS LETTERS

Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

(2016) Hiroyuki Taketomi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

(2016) Z Mi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

(2016) Jianpeng Cheng et al.   Scientific Reports

Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy

(2016) Theodore D. Moustakas   MRS Communications

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

III-Nitride nanowire optoelectronics

(2015) Songrui Zhao et al.   PROGRESS IN QUANTUM ELECTRONICS

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

(2013) E. Cicek et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

(2011) Pinar Dogan et al.   CRYSTAL GROWTH & DESIGN

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

(2010) Meng Zhang et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxy growth and optical properties of AlN nanowires

(2010) O. Landré et al.   APPLIED PHYSICS LETTERS

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

(2010) G. Koblmüller et al.   JOURNAL OF APPLIED PHYSICS

Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes

(2009) Yongjian Sun et al.   JOURNAL OF APPLIED PHYSICS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   Nature Photonics