High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

(2018) Lei Pan et al.   APPLIED SURFACE SCIENCE

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

(2018) Feng Liang et al.   Nanomaterials

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

(2016) Jianpeng Cheng et al.   Scientific Reports

Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

(2013) Shengrui Xu et al.   NANO LETTERS

XPS study of polycrystalline diamond surfaces after annealing treatment

(2012) Xiaoyu Pan et al.   SURFACE & COATINGS TECHNOLOGY

Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

(2011) Lung-Chien Chen et al.   JOURNAL OF LUMINESCENCE

Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111)

(2010) Jijun Xiong et al.   APPLIED SURFACE SCIENCE

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

(2009) A. Dussaigne et al.   JOURNAL OF CRYSTAL GROWTH

Direct observation of defects in hexagonal boron nitride by near-edge X-ray absorption fine structure and X-ray photoemission spectroscopy

(2009) M. Petravic et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT