Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

Resistive switching materials for information processing

(2020) Zhongrui Wang et al.   Nature Reviews Materials

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

(2020) Jinju Lee et al.   ACS Applied Materials & Interfaces

Alloying conducting channels for reliable neuromorphic computing

(2020) Hanwool Yeon et al.   Nature Nanotechnology

Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

(2020) Muhammad Ismail et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory

(2019) Stefan Petzold et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device

(2019) Yu-Rim Jeon et al.   ACS Applied Materials & Interfaces

System-Level Simulation of Hardware Spiking Neural Network Based on Synaptic Transistors and I&F Neuron Circuits

(2018) Sungmin Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM

(2018) Cheng-Hsien Wu et al.   IEEE ELECTRON DEVICE LETTERS

Spiking Neural Network Using Synaptic Transistors and Neuron Circuits for Pattern Recognition With Noisy Images

(2018) Hyungjin Kim et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

(2018) Yichen Fang et al.   IEEE ELECTRON DEVICE LETTERS

Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing

(2018) Yawar Abbas et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

(2018) Yawar Abbas et al.   Scientific Reports

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

(2018) Writam Banerjee et al.   Advanced Electronic Materials

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

(2018) Suhyun Bang et al.   SOLID-STATE ELECTRONICS

Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

(2018) M. Prezioso et al.   Nature Communications

Reduction of the Cell-to-Cell Variability in Hf1-xAlxOyBased RRAM Arrays by Using Program Algorithms

(2017) E. Perez et al.   IEEE ELECTRON DEVICE LETTERS

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

(2017) Wei Wu et al.   IEEE ELECTRON DEVICE LETTERS

3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications

(2017) Gina C. Adam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays

(2017) Eduardo Perez et al.   IEEE Journal of the Electron Devices Society

TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

(2016) Jaesung Park et al.   IEEE ELECTRON DEVICE LETTERS

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

(2016) Alessandro Grossi et al.   SOLID-STATE ELECTRONICS

A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM

(2015) F. M. Puglisi et al.   IEEE ELECTRON DEVICE LETTERS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

(2015) Sungjun Kim et al.   SOLID-STATE ELECTRONICS

Dielectric Breakdown of $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{HfO}_{2}$ Bi-Layer Gate Dielectric

(2014) Kartika Chandra Sahoo et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications

(2012) Branden Long et al.   IEEE ELECTRON DEVICE LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts

(2011) Yoon Cheol Bae et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B