Article
Materials Science, Multidisciplinary
Ziying Tang, Huying Zheng, Bicheng Wang, Lisheng Wang, Yaqi Wang, Runchen Wang, Zhiren Qiu, Xianghu Wang, Shichen Su, Lin Li, Hai Zhu
Summary: In this report, a high performance beta-phase Ga203 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector was successfully fabricated using the hybrid Ga/GaO buffer layer method. The detector exhibited low dark-state current and high UV photon responsibility. It also demonstrated ultrafast transient characteristics for DUV signals and was capable of capturing high contrast two-dimensional scanning images.
MATERIALS TODAY PHYSICS
(2023)
Article
Materials Science, Ceramics
Jun Lin, Zhao Wang, Xiuyu Lin, Xuan Wei, Wei Zheng, Qichang Hu
Summary: AlN has great potential for ultraviolet detectors due to its characteristics of ultra-wide bandgap, radiation resistance, high thermal and chemical stability. However, its application in solar-blind ultraviolet detection is limited by the absorption cutoff edge. In this study, a photovoltaic SBUV detector with p-Gr/i-AlZnN/n-Si heterojunction structure is fabricated using amorphous AlZnN film with an absorption cutoff edge of 258 nm. The device exhibits outstanding SBUV detection performance, indicating the potential for the preparation of AlZnN SBUV detectors with excellent performance.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Physical
Mingming Chen, Xuemin Shen, Chen Zhou, Dawei Cao, Wei Xue
Summary: A high-performance self-powered UV photodetector based on ferroelectric PZT thin films has been fabricated, simplifying device structure and fabrication process. The unique bulk photovoltaic effect of ferroelectric materials can enhance device performance compared to complex device structures. Additionally, the self-powered photocurrent is further enhanced when downward polarizing the PZT thin film.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Chang Liu, Xiaodong Li, Tiangui Hu, Wenkai Zhu, Faguang Yan, Tiesheng Wu, Kaiyou Wang, Lixia Zhao
Summary: Integrating GaN nanopillars with graphene/GaN/Ti/Au photodetector enhances detection performance. The nanopillars reduce dark current by decreasing contact area between GaN and graphene electrode. When illuminated with UV light, the nanopillars create enhanced electric field and increase UV light absorption and photocurrent.
Article
Materials Science, Multidisciplinary
Ming-Ming Fan, Kang-Li Xu, Xiu-Yan Li, Gao-Hang He, Ling Cao
Summary: By constructing a PEDOT:PSS/alpha-Ga2O3 heterojuncion through complex processes, a self-powered PEDOT:PSS/alpha-Ga2O3 photodetector with dual-band photodetection capability has been successfully developed, showing high responsivity in both solar-blind UV and visible light bands. This photodetector not only greatly improves responsivity, but also achieves dual-band photodetection for the first time among self-powered Ga2O3-based detectors.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Engineering, Electrical & Electronic
Taihao Chen, Yong Fang, Mengru Zhu, Zhiwei Zhao, Wei Lei, Zhuoya Zhu, Helong Jiang
Summary: Flexible dual-spectral carbon nanodots/flexible n-silicon heterojunction photodetectors with high responsivity and detectivity are reported. These detectors show photo response in UV illumination and only in forward bias under visible illumination. The photocurrent of the device remains high even under bending strain.
SENSORS AND ACTUATORS A-PHYSICAL
(2024)
Article
Chemistry, Multidisciplinary
Yanan Zhang, Shujie Jiao, Junhua Zhang, Shuo Liu, Dongbo Wang, Shiyong Gao, Jinzhong Wang
Summary: A GaOOH/Ga2O3 heterojunction was achieved through a one-step annealing treatment, and its solar blind photoresponse performance was characterized using photoelectrochemical detectors. The results showed that the GaOOH/Ga2O3 heterojunction detector exhibited superior performance in pure solar-blind ultraviolet detection.
Article
Chemistry, Multidisciplinary
Mengjuan Li, Zhenlei Wang, Yuanhao Jin, Haitao Yang, Lihui Zhang, Huijuan Li, Jiaping Wang, Shoushan Fan, Qunqing Li
Summary: In this study, a novel and cost-effective method for preparing one-dimensional TiO2 nanowire arrays using a super-aligned carbon nanotube film as a template is reported. Pure anatase-phase TiO2 nanowires were synthesized on a flexible substrate, leading to a high-performance UV photodetector with a large surface area and one-dimensional nanostructure. The TiO2 nanowire array exhibited a high detectivity (1.35 x 10(16) Jones) and an ultrahigh photogain (2.6 x 10(4)), as well as a high photoresponsivity of 7.7 x 10(3) A/W, which is significantly higher than that of commercial UV photodetectors. Furthermore, the TiO2 nanowire array demonstrated polarized photodetection due to its anisotropic geometry. The use of nanomaterial systems shows great potential for practical applications in nanostructured photodetectors.
Article
Physics, Multidisciplinary
Bicheng Wang, Ziying Tang, Huying Zheng, Lisheng Wang, Yaqi Wang, Runchen Wang, Zhiren Qiu, Hai Zhu
Summary: In this study, a high-performance beta-phase (In0.09Ga0.91)(2)O-3 single-crystalline film deep ultraviolet photodetector was successfully fabricated. The device exhibits low dark current, high UV photon responsivity, and a high UV/VIS rejection ratio. Additionally, the device demonstrates ultrafast transient characteristics and can be used for two-dimensional scanning in an imaging system.
Article
Materials Science, Ceramics
Elluz Pacheco, Badi Zhou, Ali Aldalbahi, Andrew F. Zhou, Peter X. Feng
Summary: Utilizing the superflat surface of ultrananocrystalline diamond, highly precise UNCD nanowire arrays were fabricated to develop high-performance UV photodetectors. The large surface-to-volume ratio of the nanowires significantly increased the number of surface trap states, effectively confined the active area of charge carriers, and shortened transit time, resulting in enhanced photoconductivity and response speed. The zero-biased UV photodetectors based on nitrogen-incorporated ultrananocrystalline diamond nanowire arrays demonstrated a responsivity of 2.0 A/W for 350 nm incident light at room temperature, with well-defined UVA and UVB photocurrent signals and a rise and decay time of less than 1 second.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Taejun Park, Sangbin Park, Joon Hui Park, Ji Young Min, Yusup Jung, Sinsu Kyoung, Tai Young Kang, Kyunghwan Kim, You Seung Rim, Jeongsoo Hong
Summary: A high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated. The detector exhibits rectification characteristics and high photo-responsivity at zero bias voltage.
Article
Engineering, Electrical & Electronic
Arathy Varghese, Abdalla Eblabla, Zehao Wu, Seyed Urman Ghozati, Khaled Elgaid
Summary: This paper presents a performance evaluation of a GaN HEMT-based UV detector on a Si substrate. Through simulations, the UV detection mechanism was investigated, and the fabricated device exhibited a high UV responsivity. The device was found to be blind to visible light, ensuring selective detection of UV wavelengths.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Jikuang Zou, Jiaxin Liu, Xin Wang, Zeyao Han, Yu Gu, Zeren He, Xingyu Lu, Xiaobao Xu, Yousheng Zou
Summary: By optimizing the fabrication process with annealing treatment, high-quality CsCu2I3 films with excellent crystallinity and without pinholes were obtained. The CsCu2I3 photodetector demonstrated high responsivity, specific detectivity, and external quantum efficiency of 42 mA W-1, 1.1 x 1011 jones, and 12.26% respectively. The device also showed excellent working stability and retained its photoresponsivity even after two months of storage in ambient air, making it suitable for UV imaging. These findings highlight the great potential of lead-free CsCu2I3 photodetectors for next-generation UV optoelectronic systems.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Mei Cui, Yang Xu, Xinyu Sun, Zhengpeng Wang, Hehe Gong, Xuanhu Chen, Tiancheng Hu, Yijun Zhang, Fang-fang Ren, Shulin Gu, Jiandong Ye, Rong Zhang
Summary: In this study, Ga2O3 solar blind photodetectors with different metal-semiconductor contact configurations were constructed and their performance was compared. The Ti/Ga2O3/Ti device operated in a photoconductive mode with high responsivity and rejection ratio, but exhibited sub-gap response and high dark current. The Ni/Ga2O3/Ni device operated in a mixed photovoltaic and photoconductive mode with decent photoresponsivity, high rejection ratio, and eliminated slow photoresponse.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Multidisciplinary
Yue Zhao, Jin-Hao Zang, Xun Yang, Xue-Xia Chen, Yan-Cheng Chen, Kai-Yong Li, Lin Dong, Chong-Xin Shan
Summary: This work introduces a photodetector that integrates Chlorin e6 with gallium oxide, achieving responses in both deep ultraviolet and visible light bands, improving recognition rate.
Article
Materials Science, Multidisciplinary
Chao Xie, Xingtong Lu, Yi Liang, Huahan Chen, Li Wang, Chunyan Wu, Di Wu, Wenhua Yang, Linbao Luo
Summary: A facile method for the growth of high-quality beta-Ga2O3 thin films and assembly into a photodetector array has been reported. The array exhibits outstanding photoresponse performance and good spatial resolution under 265nm DUV illumination, showing potential for multifunctional DUV optoelectronic applications.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2021)
Article
Chemistry, Physical
Bin Wang, Chao Zhang, Bin Zeng, Chun-Yan Wu, Chao Xie, Di Wu, Yu-Xue Zhou, Lin-Bao Luo
Summary: The study presents a method for patterned growth of addressable perovskite photodetector arrays using uncured polydimethylsiloxane (PDMS) oligomer-assisted solution-processed approach, achieving high-performance photodetector arrays with reasonable spatial resolution as a real-time image sensor. The technique shows promising potential for large-scale fabrication of other photodetector arrays for future integrated optoelectronic devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Chao Zhang, Bin Wang, Ruiyu Luo, Chunyan Wu, Shirong Chen, Jigang Hu, Chao Xie, Linbao Luo
Summary: This study demonstrates the fabrication of a high-performance CuO/Si microholes array photodetector through a specific process, showing excellent response speed and light-matter interaction ability, suitable for achieving high-performance on-chip photodetection.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Chao Xie, Yi Wang, Siliang Wang, Wenhua Yang, Wei Zeng, Zhixiang Huang, Feng Yan
Summary: In this study, a highly efficient near-infrared photodetector is fabricated using a simple solution-based drop-casting technique. The device exhibits a high photocurrent responsivity and photovoltaic effect when illuminated by 1550 nm light. The performance of this photodetector is comparable to previously reported devices and provides a cost-effective solution for future optoelectronic systems.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Chao Xie, Jiyu Xu, Yi Wang, Wenhua Yang, Yuyi Zhao, Siliang Wang, Hao Liu, Qi Wang, Xueguang Yuan, Wei Zeng, Zhixiang Huang
Summary: This work reports a highly sensitive SWIR photodetector composed of a two-dimensional MXene and three-dimensional In0.53Ga0.47 As heterostructure. The heterostructure shows notable photovoltaic activity and can operate in self-powered mode at zero bias with high light-to-dark ratios and other outstanding performance parameters.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Li Zhang, Zhenhua Wei, Xiuxiu Wang, Luoyu Zhang, Yi Wang, Chao Xie, Tao Han, Feng Li, Wei Luo, Dongxu Zhao, Mingsheng Long, Lei Shan
Summary: Metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) heterodiode-based SBUV photodetector has a high photoresponsivity and fast response speed, making it suitable for a wide range of applications such as missile plume tracking, flame detection, environmental monitoring, and optical communication. This study provides an alternative method for designing fast-speed SBUV photodetectors with great potential in applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Chao Xie, Yi Wang, Zhaosheng Xia, Yu Cheng, Xisheng Cui, Shijie Xu, Xingang Ren, Wenhua Yang, Zhixiang Huang
Summary: In this study, a highly efficient flexible photodetector with remarkable light trapping effect and excellent photoresponse performance was successfully fabricated. It also demonstrated outstanding mechanical flexibility and robust bending endurance, making it suitable for applications such as monitoring heart rate.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Materials Science, Multidisciplinary
Xiao-Wei Tong, Min Fan, Chao Xie, Li Wang, Hai-Bo Wang, Qin-Qin Qian, Shi-Bin Lu, Lin Jin, Zhong-Xiang Zhang
Summary: This work presents a sensitive wavelength sensor that can quantitatively discriminate incident light wavelengths from deep-ultraviolet to near-infrared spectrum. The sensor is composed of a PdTe2/thin Si/PdTe2 heterojunction and has the ability to work without an external power supply. The sensor shows different spectral responses based on the direction of light irradiation.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Huahan Chen, Chao Xie, Xianpeng Zhong, Yi Liang, Wenhua Yang, Chunyan Wu, Linbao Luo
Summary: The researchers demonstrated that using a quasi-2D perovskite thin film as an antireflection coating greatly improves the performance of a multilayered PdTe2/Ge heterostructure-based NIR photodetector. By optimizing the thickness of the perovskite coating, the photoresponsivity and specific detectivity were significantly improved while other performance parameters remained almost identical. The application of the perovskite material not only enhances the performance of NIR optoelectronic devices but also improves their stability and durability.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Yi Liang, Chao Xie, Cheng-yun Dong, Xiao-wei Tong, Wen-hua Yang, Chun-yan Wu, Lin-bao Luo
Summary: The research team has successfully implemented an electrically adjustable single-band/dual-band photodetector, which can switch between different wavelength ranges and has excellent responsivity. This innovation opens up new possibilities in designing high-performance photodetectors.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Yue Zhang, Ming Wang, Kaijun Cao, Chunyan Wu, Chao Xie, Yuxue Zhou, Linbao Luo
Summary: A gamma-In2Se3/Si heterostructure phototransistor with broadened photoresponse has been developed, showing high responsivity and fast response speed, suitable for real-time and accurate health monitoring applications such as heart rate detection.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Lin-Bao Luo, Ting Fang, Chao Xie, Li Wang, Di Wu, Feng-Xia Liang
Summary: A wavelength sensor capable of distinguishing illumination with wavelengths ranging from ultraviolet to near infrared has been developed. The sensor is composed of two parallelly stacking graphene/thin Si/graphene heterojunction devices, displaying different optical properties under various light illuminations according to theoretical simulation. The numerical equation can accurately determine the wavelength in the range from 265 to 1050 nm with a low error rate, suggesting potential application for future optoelectronic systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Multidisciplinary
Yu Lu, Yue Wang, Chenhao Xu, Chao Xie, Wenbin Li, Jie Ding, Wanying Zhou, Zipeng Qin, Xinyi Shen, Lin-Bao Luo
Summary: The research presents the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array with self-driven ability and fast response speed in the SWIR spectrum region. The photodetector exhibits outstanding photovoltaic effect, high photoresponse performance, and successful integration into optical communication systems.
Article
Materials Science, Multidisciplinary
Mengru Ma, Huahan Chen, Kunnan Zhou, Chao Xie, Yi Liang, Li Wang, Chunyan Wu, Wenhua Yang, Jiawen Guo, Linbao Luo
Summary: The study demonstrated the assembly of a multilayered PtSe2/pyramid-Si heterostructure-based photodetector array consisting of 8 x 8 device units, which enables efficient self-driven photodetection upon 810 nm NIR light illumination. The photodetector array exhibits excellent uniformity and repeatability in photoresponse performance with negligible unit-to-unit variation, showing great potential for NIR image sensing and light trajectory tracking applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)