Multilayered PdTe2/GaN Heterostructures for Visible-Blind Deep-Ultraviolet Photodetection

Deep-ultraviolet (DUV) photodetection has garnered extensive research interest for its vital applications in many military and civil fields. In this work, we present the synthesis of a large-area two-dimensional (2D) PdTe2 multilayer, which can be directly transferred onto a GaN substrate to construct a vertical heterostructure for visible-blind DUV photodetection. Upon 265 nm light irradiation, the heterostructure displays a distinct photo-voltaic behavior, enabling it to serve as a self-driven photodetector. The important photoresponse parameters, such as I-light/I-dark ratio, responsivity, specific detectivity and DUV/visible (265 nm/450 nm) rejection ratio reach as high as 10(6), 168.5 mA/W, 5.3 x 10(12) Jones, and 10(4), respectively, at zero bias. The responsivity can be further enhanced to 254.6 mA/W by applying a small reverse bias of -1.0 V. In addition, the photodetector can function as a DUV light image sensor to reliably record an H pattern with a decent resolution. The present study paves a way for designing high-performance cost-effective DUV photodetectors towards practical optoelectronic applications.

Automated summary

The synthesis of large-area two-dimensional PdTe2 multilayer for visible-blind deep-ultraviolet photodetection was presented. The heterostructure displayed distinct photo-voltaic behavior and high response parameters, serving as a self-driven photodetector. The photodetector could also function as a DUV light image sensor with reliable recording capabilities.