Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

Published 2016 View Full Article

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Title
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 10, Pages 1284-1287
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-08-26
DOI
10.1109/led.2016.2602886

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