Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

Published 2018 View Full Article

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Title
Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode
Authors
Keywords
Thin films, Resistive switching, Molybdenum disulphide, Tungsten nitride, Conducting filament
Journal
CURRENT APPLIED PHYSICS
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2018-11-08
DOI
10.1016/j.cap.2018.10.013

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