Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlOx Gate Dielectrics
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Title
Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlOx Gate Dielectrics
Authors
Keywords
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Journal
Applied Sciences-Basel
Volume 11, Issue 10, Pages 4393
Publisher
MDPI AG
Online
2021-05-12
DOI
10.3390/app11104393
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