Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

(2009) Hongtao Yuan et al.   ADVANCED FUNCTIONAL MATERIALS

High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach

(2009) Min Ki Ryu et al.   APPLIED PHYSICS LETTERS

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

(2009) Ayumu Sato et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

(2008) Wantae Lim et al.   APPLIED PHYSICS LETTERS

High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator

(2008) J. B. Kim et al.   APPLIED PHYSICS LETTERS

High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

(2008) Jong H. Na et al.   APPLIED PHYSICS LETTERS

Electrical Double-Layer Structure in Ionic Liquids: A Corroboration of the Theoretical Model by Experimental Results

(2008) Md. Mominul Islam et al.   Journal of Physical Chemistry C