Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs

Super high-dielectric-constant oxide films for next-generation nanoelectronics and supercapacitors for energy storage

(2020) Orlando Auciello et al.   MRS BULLETIN

Argon atoms insertion in diamond: New insights in the identification of carbon C 1s peak in X-ray photoelectron spectroscopy analysis

(2018) Jean-François Veyan et al.   CARBON

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_\text{T/{f}_{\max}$ of 70/80 GHz

(2018) Xinxin Yu et al.   IEEE ELECTRON DEVICE LETTERS

3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

(2018) Shoichiro Imanishi et al.   IEEE ELECTRON DEVICE LETTERS

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

(2017) Yuya Kitabayashi et al.   IEEE ELECTRON DEVICE LETTERS

Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

(2017) J. W. Liu et al.   JOURNAL OF APPLIED PHYSICS

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

(2014) H. Kawarada et al.   APPLIED PHYSICS LETTERS

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

(2014) Jiangwei Liu et al.   Scientific Reports

Tailoring dielectric relaxation in ultra-thin high-dielectric constant nanolaminates for nanoelectronics

(2013) Geunhee Lee et al.   APPLIED PHYSICS LETTERS

Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

(2013) Jin-long Liu et al.   International Journal of Minerals Metallurgy and Materials

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3Passivation Layer

(2013) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Analysis of diamond surface channel field-effect transistors with AlN passivation layers

(2013) C. Pietzka et al.   JOURNAL OF APPLIED PHYSICS

Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices

(2013) Geunhee Lee et al.   JOURNAL OF APPLIED PHYSICS

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(2012) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

(2012) Shaoheng Cheng et al.   APPLIED PHYSICS LETTERS

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2

(2012) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

Controllable giant dielectric constant in AlOx/TiOynanolaminates

(2011) Wei Li et al.   JOURNAL OF APPLIED PHYSICS

Giant dielectric constant dominated by Maxwell–Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition

(2010) Wei Li et al.   APPLIED PHYSICS LETTERS

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

(2010) S. Dhar et al.   JOURNAL OF APPLIED PHYSICS

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

(2009) M. Cassé et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS