Article
Engineering, Electrical & Electronic
Yue He, Ke-Yue Chen, Ting-Ting Wang, Mao Jia, Li-Hua Bai, Xiao Wang, Yu-Yu Bu, Jin-Ping Ao
Summary: In this article, a biosensor based on AlGaN/GaN HFETs is developed to directly detect the tumor biomarker miRNA-155. By fixing the specific SH-RNA probe on the Au-gate surface of the AlGaN/GaN HFET, an RNA-Au-AlGaN/GaN HFET biosensor is fabricated, which can conveniently and rapidly detect miRNA155. The experimental results show that this biosensor has an excellent detection limit of 1.81 fM and a high sensitivity of 77 mu A/log concentration with a linear range (2 fM-2 nM). The biosensor exhibits a high specific recognition capacity but is weakly sensitive to mismatched miRNA.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert, Devin T. Davis, Ahmad E. Islam, Dennis Walker Jr, Gary Hughes, Kyle Liddy, Kelson D. Chabak
Summary: This paper presents a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. The model was modified to accurately capture the DC and RF measurements at different chuck temperatures, and its accuracy was validated through various tests. The extrapolated performance of the GaN HEMT at twice the operating temperature was also predicted using this model.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Chemistry, Physical
Romualdo Alejandro Ferreyra, Matias Abel Quiroga
Summary: This study developed a kinetic Monte Carlo model to simulate the experimental deposition of GaN and Ge-GaN materials, by calculating the event rates in the deposition, diffusion, and desorption processes. By investigating the impact of Ge diffusion energies and experimental deposition conditions, the study discussed the outcomes of the kMC model, which were consistent with observed experimental results.
APPLIED SURFACE SCIENCE
(2021)
Article
Automation & Control Systems
Rustam Kumar, Arnab Sarkar, Sandeep Anand, Amit Verma, Tian-Li Wu
Summary: This article presents a measurement circuit for evaluating the dynamic on-state resistance of gallium nitride high electron mobility transistors. The circuit allows independent control over the testing conditions and measurement of forward and reverse conduction modes.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2023)
Article
Computer Science, Hardware & Architecture
Meilin Wu, Shijie Wang, Chao Yu, Giovanni Crupi, Jialin Cai
Summary: This work presents the design of a load-modulated balanced power amplifier (LMBA) based on the X-parameter model. A 10-W GaN packaged transistor is used for the power amplifier design. The X-parameter model accurately predicts the nonlinear behavior of the device and determines the optimal output power and drain efficiency region for the LMBA design. An LMBA is fabricated and tested, showing good performance with high output power and efficiency.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
(2023)
Article
Engineering, Electrical & Electronic
Ming Yang, Zhiliang Gao, Xinguang Su, Yuanyuan Wang, Yanhui Han, Xu Tang, Ben Li, Jihao He, Jun Liu, Ruojue Wang, Xiao Liu, Fei Mei, Lei Wang, Li Zhou, Wei Song, Yingqian Liu, Fayu Wan, Zhengang Cui, Bin Liu
Summary: A method is proposed to determine the drain access resistance in the saturation region of AlGaN/GaN HFETs. The variation of the drain access resistance is analyzed qualitatively and quantitatively. It is found that the difference between the drain and source access resistance is attributed to the asymmetry of additional polarization charge distribution at the AlGaN/GaN interface. The drain access resistance components corresponding to polarization Coulomb field scattering, polar-optical-phonon scattering, piezoelectric scattering, and interface roughness scattering are obtained. It is observed that POP scattering dominates the drain access resistance with increasing drain-source current.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Optics
Haonan Ge, Runzhang Xie, Yunfeng Chen, Peng Wang, Qing Li, Yue Gu, Jiaxiang Guo, Jiale He, Fang Wang, Weida Hu
Summary: With the development of infrared optoelectronic technology, high responsivity, ultra-low dark current, and high response speed have become important factors for the next generation of infrared photodiodes. A photon-trapping structure utilizing the skin effect of metals to enhance absorption has been proposed, with optical simulations showing significant improvements in absorption and responsivity for HgCdTe infrared photodiodes. This design method provides a way to develop small pixel, large scale, and low dark current focal plane array infrared photodiodes.
Article
Chemistry, Physical
Wenbo Peng, Chenhong Wang, Fangpei Li, Yongning He
Summary: This paper investigates the basic characteristics of a photo-voltage field-effect transistor (FET) and demonstrates the modulation of the FET characteristics using both piezo-voltage and photo-voltage. The results show that strain induced piezo-voltage and illumination induced photo-voltage can effectively control the conduction channel thickness and current of the FET.
Review
Computer Science, Information Systems
Zhiwen Tian, Xuan Ji, Dongwei Yang, Pei Liu
Summary: This article summarizes several breakdown mechanisms of GaN devices and proposes techniques to suppress these mechanisms. Through continuous research and development, the performance of power electronic systems can be improved.
Article
Engineering, Electrical & Electronic
Yuanlei Zhang, Zhiwei Sun, Weisheng Wang, Ye Liang, Miao Cui, Yinchao Zhao, Huiqing Wen, Wen Liu
Summary: In this work, Ni/Ag contacts on p-channel heterostructure field-effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform were demonstrated. By optimizing the contact condition, low contact resistance and Schottky barrier height were achieved. The p-HFETs with Ni/Ag contacts exhibited excellent electrical properties, indicating the great potential of cost-effective Ni/Ag contacts on p-HFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Chemistry, Analytical
Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Summary: GaN HEMT on Si has attracted attention for its wide applications, but faces challenges such as high defect density compromising performance and reliability. Different substrate structures like SOI are introduced to enhance epitaxy quality and enable integration with Si CMOS. The recent development of 3D hetero-integration technology shows promise for combining GaN technology and CMOS.
Article
Engineering, Electrical & Electronic
Maher B. Tahhan, John A. Logan, Matthew T. Hardy, Mario G. Ancona, Brian Schultz, Brian Appleton, Thomas Kazior, David J. Meyer, Eduardo M. Chumbes
Summary: This article presents improvements in the large-signal RF power performance at the Ka-band of gallium nitride HEMTs utilizing a scandium aluminum nitride barrier. The results showed that silicon nitride as the passivation layer increased the gain and output power, but reduced the breakdown voltage. Adding an epitaxial aluminum gallium nitride passivating layer increased the maximum bias voltage that the devices can operate at.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Hongwei Xu, Taikyu Kim, HeeSung Han, Min Jae Kim, Jae Seok Hur, Cheol Hee Choi, Joon-Hyuk Chang, Jae Kyeong Jeong
Summary: Broadband spectral detection from ultraviolet to infrared is a technological challenge for high-performance photodetection materials. In this study, a heterostructure composed of tellurium oxide and InGaSnO was successfully stacked, resulting in superior photoelectric characteristics. This heterostructure has potential applications in designing wide band optoelectronic devices with high sensitivity, flexibility, and stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Automation & Control Systems
Xiao Long, Zhao Jun, Botao Zhang, Dongdong Chen, Wu Liang
Summary: This article presents a unified electrothermal behavior modeling method for SiC MOSFET and GaN HEMT, with a parameter extraction method based on modeling data and optimization algorithm. The proposed modeling method has been verified through simulation and experiment, showing its correctness and applicability to several commercially available devices.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Physics, Applied
Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta
Summary: An accurate method for extracting the thermal resistance of GaN-on-Si HEMTs is proposed in this paper. By pulsing the substrate instead of the drain or gate, the impact of traps on the extraction process is reduced. Experimental results show the effectiveness of the proposed method compared to the existing drain pulsing method.
APPLIED PHYSICS LETTERS
(2023)
Review
Physics, Applied
Michael J. Uren, Martin Kuball
Summary: This article examines the impact of buffer doping on the critical performance issues of GaN high electron mobility transistors, showing that carbon can lead to the epitaxial buffer becoming p-type and electrically isolated from the two-dimensional electron gas. Simulation models are used to explain a wide range of experimental observations related to current-collapse and dynamic R-ON in power switches, as well as other phenomena in RF GaN-on-SiC devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Markus Wohlfahrt, Michael J. Uren, Felix Kaess, Oleg Laboutin, Hassan Hirshy, Martin Kuball
Summary: AlGaN/GaN High Electron Mobility Transistors (HEMTs) exhibit a UV-induced persistent photoconductivity (PPC) effect, which is related to changes in electronic band bending in the buffer layer. This effect is significant only in p-type buffers and allows for quantification of deep-level doping density, with recovery times extending to several days.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Ehsan M. Azad, James J. Bell, Roberto Quaglia, Jorge J. Moreno Rubio, Paul J. Tasker
Summary: A new mathematical formulation is proposed in this paper to enhance the Cardiff nonlinear behavioral model by incorporating the dc bias voltages (drain and gate) into the model. The effectiveness of this formulation is verified through modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. The interpolation of load-pull data in the presented case leads to over 90% reduction in the density of load-pull data required for generating a nonlinear behavioral model over a wide range of dc bias points.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Feiyuan Yang, Manikant Singh, Michael J. Uren, Trevor Martin, Hassan Hirshy, Michael A. Casbon, Paul J. Tasker, Martin Kuball
Summary: The breakdown mechanism in 0.25-μm gate length AlGaN/GaN-on-SiC transistors is investigated using the drain current injection technique. The results show that breakdown can be divided into two stages, which are related to gate voltage levels and material characteristics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Yuke Cao, James W. Pomeroy, Michael J. Uren, Feiyuan Yang, Jingshan Wang, Patrick Fay, Martin Kuball
Summary: The electric field distribution of GaN-on-GaN p-n diodes with partially compensated ion-implanted edge termination (ET) was characterized using an electric field induced second harmonic generation technique (EFISHG). The effectiveness of the ET structure was confirmed by the distributed electric field from the anode to the outer edge of the ET. However, the effectiveness was found to be strongly dependent on the acceptor charge distribution in the partially compensated layer (PC) of the ET.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Maria Rocio Moure, Michael Casbon, Nicolas Ladero, Monica Fernandez-Barciela, Paul J. Tasker
Summary: In the framework of Power Amplifier (PA) design for communications, frequency domain non-linear behavioural models have shown their potential as efficient complementary modelling tools when Field Effect Transistor compact models are not available or sufficiently accurate. This paper presents a systematic analysis methodology to guide the user in selecting the necessary model complexity in different PA design scenarios, and validates the methodology using NVNA LP measurements of GaN Heterostructure FETs.
IET MICROWAVES ANTENNAS & PROPAGATION
(2022)
Article
Physics, Applied
Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball
Summary: The frequency dispersion of impedance in lateral beta-Ga2O3 MOSFETs has been studied and a model has been developed to explain the phenomenon. The dispersion is caused by the resistive and capacitive coupling between the terminal contact pads and the buried conducting layer at the unintentionally-doped epitaxy/substrate interface, which also leads to a buried parallel leakage path. It is shown that the dispersion is not related to gate dielectric traps, as commonly assumed. A generalized equivalent circuit model is proposed to explain the experimental results.
APPLIED PHYSICS EXPRESS
(2023)
Article
Engineering, Electrical & Electronic
Akhil S. Kumar, Michael J. Uren, Justin Parke, H. George Henry, Robert S. Howell, Martin Kuball
Summary: Multichannel RF power amplifiers provide high frequency operation, high current and RF power, and excellent linearity. By using 3D and 2D simulations, the impact of device architecture on linearity and off-state reliability can be investigated, leading to an improved linear design without compromising reliability. Linearity is assessed using a 2D approximation which is computationally efficient, while off-state reliability is evaluated using a full 3D simulation to measure peak electric field. The study suggests that introducing channel number-dependent doping can enhance transconductance-linearity, and increasing gate dielectric thickness or fin width leads to a strong increase in third order intercept, while maintaining reliability requires increased fin height to reduce electric field.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Ehsan M. Azad, Roberto Quaglia, James J. Bell, Kauser Chaudhry, Paul J. Tasker
Summary: This paper presents an analysis of a Fourier transferred dataset to accurately extract a Cardiff nonlinear behavioral model that is dependent on direct current. The analysis is based on simulated data from a 10W GaN high electron mobility transistor (HEMT) at a frequency of 3.5 GHz. Tailored load-pull data were collected by adjusting the gate and drain voltages, ranging from -3.0V to -2.0V and 15V to 30V, respectively. The extracted model coefficients are capable of accurately predicting the load-pull data with a normalized mean square error (NMSE) value of less than -40 dB.
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Ehsan M. Azad, Roberto Quaglia, Kauser Chadhary, James J. Bell, Paul J. Tasker
Summary: This paper explores the use of the Cardiff nonlinear behavioral model to characterize the response of multiple-input power amplifiers. A case study on a 300 W load modulated balanced amplifier demonstrates the accuracy and efficiency of the model.
PROCEEDINGS OF THE 2022 21ST MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS 2022)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Ehsan M. Azad, Roberto Quaglia, James J. Bell, Kauser Chadhary, Anh Nghiem, Komo Sulaksono, Paul J. Tasker
Summary: This paper presents an analysis of load-pull measurement data of a GaN on SiC HEMT at 3.6 GHz, aimed at aiding the design of Doherty power amplifiers with multiple DC supply voltages. The analysis of fundamental load-pull data in class AB configuration enables the optimal load modulation design for the Main amplifier at DC bias levels of 28V and 50V.
2022 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC)
(2022)
Article
Computer Science, Information Systems
Ainhoa Morales-Fernandez, Monica Fernandez-Barciela, Fernando Isasi-Vicente, Fernando Martin-Rodriguez, Paul J. Tasker
Summary: A hybrid dual-band power amplifier prototype has been designed for Unmanned Aerial Vehicles (UAVs) communication applications in Spain. It utilizes Gallium Nitride technology and microstrip transmission lines to achieve wideband, good linearity and efficiency.
