Heterostructural phase diagram of Ga2O3–based solid solution with Al2O3

Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

(2020) Virginia D. Wheeler et al.   CHEMISTRY OF MATERIALS

The further investigation of N-doped β-Ga2O3 thin films with native defects for Schottky-barrier diode

(2019) Suzhen Luan et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

(2019) Hongpeng Zhang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface

(2018) Sung Beom Cho et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of Ga2O3-Al2O3 alloys

(2018) Hartwin Peelaers et al.   APPLIED PHYSICS LETTERS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys

(2018) Tianshi Wang et al.   Physical Review Applied

Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

(2018) Dae-Woo Jeon et al.   APL Materials

Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

(2017) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Novel phase diagram behavior and materials design in heterostructural semiconductor alloys

(2017) Aaron M. Holder et al.   Science Advances

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

(2016) Francesco Mezzadri et al.   INORGANIC CHEMISTRY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)

(2014) Robert Schewski et al.   Applied Physics Express

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Efficient stochastic generation of special quasirandom structures

(2013) A. van de Walle et al.   CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY

Assessing capability of semiconductors to split water using ionization potentials and electron affinities only

(2013) Vladan Stevanović et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

(2011) R. R. Pelá et al.   APPLIED PHYSICS LETTERS

β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy

(2009) Takayoshi Oshima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS