Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Title
Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Authors
Keywords
-
Journal
Applied Physics Express
Volume -, Issue -, Pages -
Publisher
Japan Society of Applied Physics
Online
2019-01-12
DOI
10.7567/1882-0786/aafded

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