Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

(2019) Wei Zhang et al.   Nature Reviews Materials

Phase-change materials: Empowered by an unconventional bonding mechanism

(2019) J. Pries et al.   MRS BULLETIN

Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding

(2018) Min Zhu et al.   ADVANCED MATERIALS

A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

(2018) Solomon Amsalu Chekol et al.   NANOTECHNOLOGY

Monatomic phase change memory

(2018) Martin Salinga et al.   NATURE MATERIALS

Steep Slope Field-Effect Transistors with B-Te based Ovonic Threshold Switch Device

(2018) Jongmyung Yoo et al.   IEEE Journal of the Electron Devices Society

Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

(2018) Yunmo Koo et al.   Scientific Reports

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

(2017) Feng Rao et al.   SCIENCE

Te-based chalcogenide materials for selector applications

(2017) A. Velea et al.   Scientific Reports

Intrinsic threshold switching responses in AsTeSi thin film

(2016) Sungho Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Ti–Sb–Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory

(2015) Mengjiao Xia et al.   ACS Applied Materials & Interfaces

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions

(2015) Min Zhu et al.   Nanoscale

Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

(2014) Anbarasu Manivannan et al.   APPLIED PHYSICS LETTERS

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

(2014) Min Zhu et al.   Nature Communications

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

(2013) Myoung-Jae Lee et al.   Nature Communications

Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

(2013) S.-D. Kim et al.   ECS Solid State Letters

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

(2012) Jong Ho Lee et al.   APPLIED PHYSICS LETTERS

Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

(2012) M. Anbarasu et al.   APPLIED PHYSICS LETTERS

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

(2012) Wally Czubatyj et al.   Electronic Materials Letters

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

(2012) M. Xu et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

(2011) M. Anbarasu et al.   JOURNAL OF APPLIED PHYSICS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Threshold switching and phase transition numerical models for phase change memory simulations

(2008) A. Redaelli et al.   JOURNAL OF APPLIED PHYSICS

Field-induced nucleation in phase change memory

(2008) V. G. Karpov et al.   PHYSICAL REVIEW B