Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
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Title
Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
Authors
Keywords
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Journal
AIP Advances
Volume 10, Issue 8, Pages 085024
Publisher
AIP Publishing
Online
2020-08-19
DOI
10.1063/5.0013511
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