Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes
Published 2020 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact of graphene interlayer on performance parameters of sandwich structure Pt/GaN Schottky barrier diodes
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 53, Issue 40, Pages 404003
Publisher
IOP Publishing
Online
2020-06-09
DOI
10.1088/1361-6463/ab9a9b
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates
- (2018) Houqiang Fu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction
- (2018) M Rejhon et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes
- (2018) C S Pathak et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts
- (2018) Min-Hyun Lee et al. NANO LETTERS
- Direct CVD Growth of Graphene on Traditional Glass: Methods and Mechanisms
- (2018) Zhaolong Chen et al. ADVANCED MATERIALS
- Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
- (2016) Ashutosh Kumar et al. ACS Applied Materials & Interfaces
- High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
- (2016) Y. Cao et al. APPLIED PHYSICS LETTERS
- Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer
- (2016) Hoon Hahn Yoon et al. NANO LETTERS
- Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
- (2016) Bhishma Pandit et al. AIP Advances
- Graphene GaN-Based Schottky Ultraviolet Detectors
- (2015) Kun Xu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Review of Graphene as a Solid State Diffusion Barrier
- (2015) Wayne K. Morrow et al. Small
- Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon
- (2014) Calvin Pei Yu Wong et al. ACS Applied Materials & Interfaces
- Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers
- (2014) Seung-heon Chris Baek et al. APPLIED PHYSICS LETTERS
- Ideal Graphene/Silicon Schottky Junction Diodes
- (2014) Dhiraj Sinha et al. NANO LETTERS
- Graphene-GaN Schottky diodes
- (2014) Seongjun Kim et al. Nano Research
- Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
- (2014) Gabriele Fisichella et al. Nanoscale
- The physics and chemistry of the Schottky barrier height
- (2014) Applied Physics Reviews
- A computational study of high-frequency behavior of graphene field-effect transistors
- (2012) Jyotsna Chauhan et al. JOURNAL OF APPLIED PHYSICS
- Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
- (2012) S. Tongay et al. Physical Review X
- Graphene/GaN Schottky diodes: Stability at elevated temperatures
- (2011) S. Tongay et al. APPLIED PHYSICS LETTERS
- Graphene-Silicon Schottky Diodes
- (2011) Chun-Chung Chen et al. NANO LETTERS
- Doping Graphene with Metal Contacts
- (2008) G. Giovannetti et al. PHYSICAL REVIEW LETTERS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started