Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

Low-resistance spin injection into silicon using graphene tunnel barriers

(2012) O. M. J. van 't Erve et al.   Nature Nanotechnology

Reduction of charge trapping in HfO2film on a Ge substrate by trimethylaluminum pretreatment

(2012) Jae Jin Lee et al.   Physica Status Solidi-Rapid Research Letters

Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

(2010) Kun-Rok Jeon et al.   APPLIED PHYSICS LETTERS

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

(2010) Yi Zhou et al.   APPLIED PHYSICS LETTERS

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

(2010) Donkoun Lee et al.   APPLIED PHYSICS LETTERS

Engineering of tunnel junctions for prospective spin injection in germanium

(2009) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

(2009) Xuesong Li et al.   NANO LETTERS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS