A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates

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Title
A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume -, Issue -, Pages 1-7
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-06-09
DOI
10.1109/ted.2018.2841904

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