Influence of layer thickness on passivation properties in SiOx/Al2O3 stacks

Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2

(2019) Daniel Hiller et al.   JOURNAL OF APPLIED PHYSICS

Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

(2018) Jack Mullins et al.   JOURNAL OF APPLIED PHYSICS

Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density

(2018) Daniel Hiller et al.   ACS Applied Materials & Interfaces

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

(2017) Dirk König et al.   Scientific Reports

Trapped charge densities in Al2O3-based silicon surface passivation layers

(2016) Paul M. Jordan et al.   JOURNAL OF APPLIED PHYSICS

Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon

(2016) Nicholas E. Grant et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

(2014) Armin Richter et al.   JOURNAL OF APPLIED PHYSICS

Influence of the SiO2 interlayer thickness on the density and polarity of charges in Si/SiO2/Al2O3 stacks as studied by optical second-harmonic generation

(2014) N. M. Terlinden et al.   JOURNAL OF APPLIED PHYSICS

Symmetrical Al2O3-based passivation layers for p- and n-type silicon

(2014) Daniel K. Simon et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?

(2013) Boris Veith et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

(2012) G. Dingemans et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Improved quantitative description of Auger recombination in crystalline silicon

(2012) Armin Richter et al.   PHYSICAL REVIEW B

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

(2011) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3

(2011) B. Hoex et al.   Physica Status Solidi-Rapid Research Letters

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS