Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Demonstration of low forward voltage InGaN-based red LEDs

(2020) Daisuke Iida et al.   Applied Physics Express

Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys

(2019) Kazuhiro Ohkawa et al.   JOURNAL OF CRYSTAL GROWTH

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

(2018) Brandon Mitchell et al.   JOURNAL OF APPLIED PHYSICS

Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates

(2018) Takuya Ozaki et al.   Applied Physics Express

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p -GaN for InGaN/GaN Light-Emitting Diodes

(2017) Kwang Jeong Son et al.   Advanced Science

Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

(2016) Daisuke Iida et al.   Applied Physics Express

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

(2016) Daisuke Iida et al.   JOURNAL OF CRYSTAL GROWTH

Yellow–red emission from (Ga,In)N heterostructures

(2015) B Damilano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Process optimization of RTA on the characteristics of ITO-coated GaN-based LEDs

(2015) H.L. Hao et al.   MICROELECTRONICS RELIABILITY

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

(2015) M. Marikkannan et al.   AIP Advances

Ohmic Contacts on p-GaN

(2015) Jingli Chen et al.   Advanced Electronic Materials

Development of InGaN-based red LED grown on (0001) polar surface

(2014) Jong-Il Hwang et al.   Applied Physics Express

Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

(2014) A. Vaitkevičius et al.   JOURNAL OF APPLIED PHYSICS

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

(2013) Wenbin Lv et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering

(2013) Aqing Chen et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN

(2012) Wenting Hou et al.   APPLIED OPTICS

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

(2012) Ingrid L. Koslow et al.   APPLIED PHYSICS LETTERS

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

(2012) Kazuhiro Ohkawa et al.   JOURNAL OF CRYSTAL GROWTH

Rapid thermal annealing of ITO films

(2011) Shumei Song et al.   APPLIED SURFACE SCIENCE

Structural, optical, and electrical properties of E-beam and sputter-deposited ITO films for LED applications

(2011) Kyoung-Kook Kim et al.   Electronic Materials Letters

AlGaInP-Based LEDs With a ${\rm p}^{+}$-GaP Window Layer and a Thermally Annealed ITO Contact

(2011) H. M. Lo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications

(2011) Sin Liang Ou et al.   OPTICS EXPRESS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS