Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films
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Title
Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 116, Issue 18, Pages 182103
Publisher
AIP Publishing
Online
2020-05-04
DOI
10.1063/5.0005523
References
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Related references
Note: Only part of the references are listed.- Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2
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- Band gap of epitaxial in-plane-dimerized single-phase NbO2 films
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- Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
- (2013) You Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
- (2012) Matthew D Pickett et al. NANOTECHNOLOGY
- Gwyddion: an open-source software for SPM data analysis
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- Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition
- (2010) Ryan M. Briggs et al. OPTICS EXPRESS
- Gas Sensor Based on Metal−Insulator Transition in VO2Nanowire Thermistor
- (2009) Evgheni Strelcov et al. NANO LETTERS
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