Band gap of epitaxial in-plane-dimerized single-phase NbO2 films

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

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Heteroepitaxy of distorted rutile-structure WO2 and NbO2 thin films

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Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

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Charge Disproportionation and Voltage-Induced Metal-Insulator Transitions Evidenced in β-PbxV2O5Nanowires

(2012) Peter M. Marley et al.   ADVANCED FUNCTIONAL MATERIALS

Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO2Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method

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Energy Level Alignment of a Zinc(II) Tetraphenylporphyrin Dye Adsorbed onto TiO2(110) and ZnO(112̅0) Surfaces

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Optical switching in VO2 films by below-gap excitation

(2008) M. Rini et al.   APPLIED PHYSICS LETTERS