- Home
- Publications
- Publication Search
- Publication Details
Title
Nitride LEDs and Lasers with Buried Tunnel Junctions
Authors
Keywords
-
Journal
ECS Journal of Solid State Science and Technology
Volume 9, Issue 1, Pages 015018
Publisher
The Electrochemical Society
Online
2019-12-06
DOI
10.1149/2.0412001jss
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors
- (2019) Cory Lund et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Stack of two III-nitride laser diodes interconnected by a tunnel junction
- (2019) M. Siekacz et al. OPTICS EXPRESS
- Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
- (2019) Henryk Turski et al. JOURNAL OF APPLIED PHYSICS
- True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
- (2018) Czeslaw Skierbiszewski et al. Applied Physics Express
- Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
- (2018) Henryk Turski et al. JOURNAL OF CRYSTAL GROWTH
- Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization
- (2018) Daniel L. Becerra et al. JOURNAL OF CRYSTAL GROWTH
- Tunnel junction enhanced nanowire ultraviolet light emitting diodes
- (2015) A. T. M. Golam Sarwar et al. APPLIED PHYSICS LETTERS
- Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes
- (2015) S. M. Sadaf et al. NANO LETTERS
- Nobel Lecture: Fascinated journeys into blue light
- (2015) Isamu Akasaki REVIEWS OF MODERN PHYSICS
- Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization ofp-type GaN by Mg doping followed by low-energy electron beam irradiation
- (2015) Hiroshi Amano REVIEWS OF MODERN PHYSICS
- Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
- (2015) Shuji Nakamura REVIEWS OF MODERN PHYSICS
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
- (2013) Henryk Turski et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
- (2012) Po Shan Hsu et al. APPLIED PHYSICS LETTERS
- Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
- (2012) R M Farrell et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now