Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Title
Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8S, Pages 08JE02
Publisher
IOP Publishing
Online
2013-05-20
DOI
10.7567/jjap.52.08je02

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