Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

(2018) Czeslaw Skierbiszewski et al.   Applied Physics Express

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

(2018) C. Chèze et al.   APPLIED PHYSICS LETTERS

Hydrogen diffusion in GaN:Mg and GaN:Si

(2018) Robert Czernecki et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

(2018) Henryk Turski et al.   JOURNAL OF CRYSTAL GROWTH

Activation of buried p-GaN in MOCVD-regrown vertical structures

(2018) Wenshen Li et al.   APPLIED PHYSICS LETTERS

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

(2017) F. Feix et al.   Physical Review Applied

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

(2016) Erin C. Young et al.   Applied Physics Express

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

(2016) Marco Malinverni et al.   Applied Physics Express

Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance

(2016) Fatih Akyol et al.   APPLIED PHYSICS LETTERS

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes

(2016) S. M. Sadaf et al.   NANO LETTERS

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

(2016) Sergio Fernández-Garrido et al.   Physical Review Applied

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

(2015) Xiaodong Yan et al.   APPLIED PHYSICS LETTERS

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes

(2015) S. M. Sadaf et al.   NANO LETTERS

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

(2014) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

(2014) C Skierbiszewski et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Low resistance GaN/InGaN/GaN tunnel junctions

(2013) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

(2013) Fatih Akyol et al.   APPLIED PHYSICS LETTERS

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

(2013) Yuka Kuwano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

(2013) H. Turski et al.   JOURNAL OF CRYSTAL GROWTH

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

(2013) Santino D. Carnevale et al.   NANO LETTERS

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

(2011) Jai Verma et al.   APPLIED PHYSICS LETTERS

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

(2011) Debdeep Jena et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Estimates of the spontaneous polarization and permittivities of AlN, GaN, InN, and SiC crystals

(2011) S. Yu. Davydov   PHYSICS OF THE SOLID STATE

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

(2009) Hisashi Masui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS