Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs

(2018) Taku Sato et al.   APPLIED PHYSICS LETTERS

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

(2017) Ling Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface

(2017) Kenjiro Uesugi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

(2016) Edward A. Jones et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

(2015) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

(2015) Zhibo Guo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

(2013) Ye Wang et al.   IEEE ELECTRON DEVICE LETTERS

Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

(2013) Junichi Kashiwagi et al.   IEEE ELECTRON DEVICE LETTERS

High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

(2013) Bong-Ryeol Park et al.   IEEE ELECTRON DEVICE LETTERS

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

(2013) Xiucheng Huang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

(2012) Matteo Meneghini et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

(2011) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

InAlN/GaN HEMTs With AlGaN Back Barriers

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

(2011) Pil Sung Park et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability issues of GaN based high voltage power devices

(2011) J. Wuerfl et al.   MICROELECTRONICS RELIABILITY

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS