Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

Nanosecond switching in GeSe phase change memory films by atomic force microscopy

(2014) James L. Bosse et al.   APPLIED PHYSICS LETTERS

An optoelectronic framework enabled by low-dimensional phase-change films

(2014) Peiman Hosseini et al.   NATURE

Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

(2013) Hyung-Woo Ahn et al.   APPLIED PHYSICS LETTERS

Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

(2012) M. Anbarasu et al.   APPLIED PHYSICS LETTERS

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

(2012) Wally Czubatyj et al.   Electronic Materials Letters

Breaking the Speed Limits of Phase-Change Memory

(2012) D. Loke et al.   SCIENCE

Design Rules for Phase-Change Materials in Data Storage Applications

(2011) Dominic Lencer et al.   ADVANCED MATERIALS

Thermodynamics of second phase conductive filaments

(2011) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

(2011) F. Xiong et al.   SCIENCE

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Crystallization times of Ge–Te phase change materials as a function of composition

(2009) S. Raoux et al.   APPLIED PHYSICS LETTERS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B