Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

Published 2013 View Full Article

Authors

Keywords

Journal

ECS Solid State Letters

Volume 2, Issue 10, Pages Q75-Q77

Publisher

The Electrochemical Society

Online

2013-07-19

DOI

10.1149/2.001310ssl

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