3D cross-point phase-change memory for storage-class memory

A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

(2018) Wei-Chih Chien et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

(2017) Yunmo Koo et al.   IEEE ELECTRON DEVICE LETTERS

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

(2017) Feng Rao et al.   SCIENCE

Te-based chalcogenide materials for selector applications

(2017) A. Velea et al.   Scientific Reports

Impact of interfaces on scenario of crystallization of phase change materials

(2016) Pierre Noé et al.   ACTA MATERIALIA

Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays

(2016) Rakesh Aluguri et al.   IEEE Journal of the Electron Devices Society

The effect of Ta interface on the crystallization of amorphous phase change material thin films

(2014) G. E. Ghezzi et al.   APPLIED PHYSICS LETTERS

Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices

(2014) Juhee Seo et al.   APPLIED PHYSICS LETTERS

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

(2014) Sang-Yeol Shin et al.   Scientific Reports

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

(2013) Tz-yi Liu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

(2013) H.-W. Ahn et al.   ECS Solid State Letters

Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

(2013) S.-D. Kim et al.   ECS Solid State Letters

Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

(2012) M. Anbarasu et al.   APPLIED PHYSICS LETTERS

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

(2012) Wally Czubatyj et al.   Electronic Materials Letters

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

(2011) J. S. Washington et al.   JOURNAL OF APPLIED PHYSICS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

(2010) Mattia Boniardi et al.   SOLID-STATE ELECTRONICS

High density 3D memory architecture based on the resistive switching effect

(2009) C. Kügeler et al.   SOLID-STATE ELECTRONICS

X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas

(2008) S.-K. Kang et al.   APPLIED PHYSICS LETTERS

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

(2008) Kwang-Jin Lee et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Etching characteristics and mechanism of Ge2Sb2Te5 thin films in inductively coupled Cl2∕Ar plasma

(2008) Nam-Ki Min et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B