High-performance nonpolar a-plane GaN-based metal–semiconductor–metal UV photo-detectors fabricated on LaAlO3 substrates

GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

(2017) Lingaparthi Ravikiran et al.   IEEE SENSORS JOURNAL

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

(2017) Choong Hee Lee et al.   JOURNAL OF APPLIED PHYSICS

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors

(2017) Maria Spies et al.   NANO LETTERS

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

(2017) An-Jye Tzou et al.   Nanoscale Research Letters

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism

(2017) Yulin Zheng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

(2017) Pawel Strak et al.   AIP Advances

Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

(2017) Jin-Ho Kang et al.   Journal of Materials Chemistry C

High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions

(2017) Weidong Song et al.   Journal of Materials Chemistry C

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

(2017) An-Jye Tzou et al.   Nanoscale Research Letters

Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

(2016) Neha Aggarwal et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Structural and optical characterization of nonpolar (10–10) m -InN/ m -GaN epilayers grown by PAMBE

(2016) Shruti Mukundan et al.   JOURNAL OF CRYSTAL GROWTH

Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

(2016) Wenliang Wang et al.   MATERIALS LETTERS

Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

(2016) Weijia Yang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy

(2015) W. Kong et al.   APPLIED PHYSICS LETTERS

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

(2015) Guoqiang Li et al.   SURFACE SCIENCE REPORTS

Enhanced UV detection by non-polar epitaxial GaN films

(2015) Shruti Mukundan et al.   AIP Advances

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

(2014) Shruti Mukundan et al.   JOURNAL OF APPLIED PHYSICS

Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

(2011) Dabing Li et al.   APPLIED PHYSICS LETTERS

Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

(2011) Dabing Li et al.   APPLIED PHYSICS LETTERS

First-principles calculations on Al/AlB2 interfaces

(2011) Y.F. Han et al.   APPLIED SURFACE SCIENCE

Structural and Electronic Properties of the Adsorption of Oxygen on AlN (101̅0) and (112̅0) Surfaces: A First-Principles Study

(2011) Honggang Ye et al.   Journal of Physical Chemistry C

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

(2011) H Elhadidy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

(2010) C.H. Chiang et al.   APPLIED SURFACE SCIENCE

SiC/Ti3SiC2interface: Atomic structure, energetics, and bonding

(2009) Zhongchang Wang et al.   PHYSICAL REVIEW B

Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition

(2007) Yen-Teng Ho et al.   JOURNAL OF CRYSTAL GROWTH