Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

(2014) B. Liu et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes

(2012) Pengfei Tian et al.   APPLIED PHYSICS LETTERS

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

(2012) Jiaxing Wang et al.   JOURNAL OF APPLIED PHYSICS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

(2011) Zhiqiang Liu et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

(2011) Jong-In Shim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Droop in III-nitrides: Comparison of bulk and injection contributions

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

(2010) X. Ni et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS