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Title
GaAsP solar cells on GaP/Si with low threading dislocation density
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 3, Pages 032107
Publisher
AIP Publishing
Online
2016-07-23
DOI
10.1063/1.4959825
References
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Note: Only part of the references are listed.- Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate
- (2016) C. S. Schulze et al. APPLIED PHYSICS LETTERS
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- Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
- (2015) Alan Y. Liu et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Defect selective etching of GaAsyP1−y photovoltaic materials
- (2014) Kevin Nay Yaung et al. JOURNAL OF CRYSTAL GROWTH
- Solar cell efficiency tables (Version 45)
- (2014) Martin A. Green et al. PROGRESS IN PHOTOVOLTAICS
- Designing III-V multijunction solar cells on silicon
- (2014) James P. Connolly et al. PROGRESS IN PHOTOVOLTAICS
- Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy
- (2014) K L Schulte et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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- Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers
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- GaAsP solar cells on GaP substrates by molecular beam epitaxy
- (2012) S. Tomasulo et al. APPLIED PHYSICS LETTERS
- Metamorphic GaAsP and InGaP Solar Cells on GaAs
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- Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
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- Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates
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