期刊
APPLIED PHYSICS LETTERS
卷 109, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4959825
关键词
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资金
- NSF CBET [1509687]
- NSF CAREER program [DMR-0955916]
- Singapore Energy Innovation Programme Office for a National Research Foundation
- National Aeronautics and Space Administration (NASA) Space Technology Research Fellowship
- Yale Climate and Energy Institute
- Yale Institute for Nanoscience and Quantum Engineering
- National Science Foundation MRSEC [DMR 1119826]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1509687] Funding Source: National Science Foundation
GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10(8) cm(-2) in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 x 10(6) cm(-2) in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%. Published by AIP Publishing.
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